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MJE16004

Description
Bipolar Transistors;NPN;5A;450V;TO-220
CategoryDiscrete semiconductor   
File Size195KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

MJE16004 Overview

Bipolar Transistors;NPN;5A;450V;TO-220

MJE16004 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknow
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter
Sustaining Voltage
: V
CEO(SUS)
= 400V(Min.)
·High
Switching Speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in high-voltage, high-speed switching of
inductive circuits where fall time and RBSOA are critical.
they are particularly well-suited for line-operated switch-
mode applications such as:
·Switching
Regulators
·High
resolution deflection circuits
·Inverters
·Motor
drives
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
i
T
stg
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current
Base Current-Peak
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
850
450
6
5
10
4
8
80
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MJE16004
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.56
UNIT
℃/W
isc Website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
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