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TIP31

Description
Bipolar Transistors;NPN;3A;40V;TO-220
CategoryDiscrete semiconductor   
File Size211KB,2 Pages
ManufacturerInchange Semiconductor
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Bipolar Transistors;NPN;3A;40V;TO-220

TIP31 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknow
INCHANGE Semiconductor
isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 1.2V(Max.)@I
C
= 3A
·Collector-Emitter
Breakdown Voltage-
: V
(BR) CEO
= 40V(Min)
·Complement
to Type TIP32
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Ttemperature Range
VALUE
40
40
5
3
5
1
40
150
-65~150
UNIT
V
V
V
A
A
A
W
TIP31
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
3.125
62.5
UNIT
℃/W
℃/W
isc Website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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