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YZ21

Description
Bipolar Transistors;NPN;5A;200V;F-1
CategoryDiscrete semiconductor   
File Size207KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

YZ21 Overview

Bipolar Transistors;NPN;5A;200V;F-1

isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 2000(Min)@ I
C
=
2A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 200V(Min)
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
YZ21
APPLICATIONS
·Designed
for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
200
200
5
5
10
50
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.56
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
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