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AT49F010-70TC

Description
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory
Categorystorage    storage   
File Size174KB,10 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric View All

AT49F010-70TC Overview

1-Megabit 128K x 8 5-volt Only CMOS Flash Memory

AT49F010-70TC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAtmel (Microchip)
Parts packaging codeTSOP1
package instructionPLASTIC, MO-142BD, TSOP-32
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time70 ns
Other featuresHARDWARE DATA PROTECTION; BYTE PROGRAMMABLE
startup blockBOTTOM
command user interfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length18.4 mm
memory density1048576 bit
Memory IC TypeFLASH
memory width8
Humidity sensitivity level3
Number of functions1
Number of departments/size1,1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size8K,120K
Maximum standby current0.0001 A
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width8 mm
Base Number Matches1
Features
Single Voltage Operation
- 5V Read
- 5V Reprogramming
Fast Read Access Time - 45 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 10
µs/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
- 30 mA Active Current
- 100
µA
CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash
Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the devices offer ac-
cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby
current is less than 100
µA.
To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re-
quire high input voltages for programming. Five-volt-only commands determine the
read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is per-
formed by erasing the entire 1 megabit of memory and then programming on a byte
by byte basis. The byte programming time is a fast 50
µs.
The end of a program cycle
can be optionally detected by the DATA polling feature. Once the end of a byte pro-
1-Megabit
(128K x 8)
5-volt Only
CMOS Flash
Memory
AT49F010
AT49HF010
AT49F010/HF010
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
Function
Addresses
Chip Enable
Output Enable
Write Enable
DIP Top View
(continued)
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
PLCC Top View
TSOP Top View
Type 1
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