IS61LSCS25672
IS61LSCS51236
Σ
RAM 256K X 72, 512K X 36
18MB SYNCHRONOUS SRAM
FEATURES
• JEDEC SigmaRam pinout and package standard
• Single 1.8V power supply (V
DD
): 1.7V (min)
to 1.9V (max)
• Dedicated output supply voltage (V
DDQ
): 1.8V
or 1.5V typical
• LVCMOS-compatible I/O interface
• Common data I/O pins (DQs)
• Single Data Rate (SDR) data transfers
• Late Write
Pipelined
(PL) read operations
• Burst and non-burst read and write operations,
selectable via dedicated control pin (ADV)
• Internally controlled Linear Burst address
sequencing during burst operations
• Burst length of 2, 3, or 4, with automatic address
wrap
• Full read/write coherency
• Byte write capability
• Two cycle deselect
• Single-ended input clock (CLK)
• Data-referenced output clocks (CQ/,
CQ)
• Selectable output driver impedance via dedicated
control pin (ZQ)
• Echo clock outputs track data output drivers
• Depth expansion capability (2 or 4 banks) via
programmable chip enables (E2, E3, EP2, EP3)
• JTAG boundary scan (subset of IEEE standard
1149.1)
• 209 Ball (11x19), 1mm pitch, 14mm x 22mm Ball
Grid Array (BGA) package
ISSI
ADVANCE INFORMATION
NOVEMBER 2002
®
Bottom View
209-Ball, 14 mm x 22 mm BGA
1 mm Ball Pitch, 11 x 19 Ball Array
SIGMARAM FAMILY OVERVIEW
The IS61LSCS series
Σ
RAMs are built in compliance with
the SigmaRAM pinout standard for synchronous SRAMs.
The implementations are 18,874,368-bit (18Mb) SRAMs.
These are the first in a family of wide, very low voltage CMOS
I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking
systems.
ISSI’s
Σ
RAMs are offered in a number of configurations that
emulate other synchronous SRAMs, such as Burst RAMs,
NBT RAMs, Late Write, or Double Data Rate (DDR) SRAMs.
The logical differences between the protocols employed by
these RAMs hinge mainly on various combinations of
address bursting, output data registering and write cueing.
Σ
RAMs allow a user to implement the interface protocol best
suited to the task at hand.
This specific product is Common I/O, SDR, Pipelined, and
in the family is identified as 1x1Lp.
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCE INFORMATION
11/11/02
Rev. 00B
1
IS61LSCS25672
IS61LSCS51236
FUNCTIONALDESCRIPTION
Because SigmaRAM is a synchronous device, address,
data Inputs, and read/write control inputs are captured on
the rising edge of the input clock. Write cycles are
internally self-timed and initiated by the rising edge of the
clock input. This feature eliminates complex off-chip write
pulse generation required by asynchronous SRAMs and
simplifies input signal timing.
ISSI
®
Single data rate
ΣRAMs
incorporate a rising-edge-triggered
output register. For read cycles,
ΣRAM’s
output data is
temporarily stored by the edge-triggered output register
during the access cycle and then released to the output
drivers at the next rising edge of clock.
IS61LSCS series
Σ
RAMs are implemented with ISSI’s
high performance CMOS technology and are packaged in
a 209-Ball BGA.
IS61LSCS25672 PINOUT
256K x 72 COMMON I/O—TOP VIEW
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
DQg
DQg
DQg
DQg
DQPg
DQc
DQc
DQc
DQc
CQ2
DQh
DQh
DQh
DQh
DQPd
DQd
DQd
DQd
DQd
2
DQg
DQg
DQg
DQg
DQPc
DQc
DQc
DQc
DQc
CQ2
DQh
DQh
DQh
DQh
DQPh
DQd
DQd
DQd
DQd
3
A
Bc
Bh
GND
V
DDQ
GND
V
DDQ
GND
V
DDQ
CLK
V
DDQ
GND
V
DDQ
GND
V
DDQ
GND
NC
A
TMS
4
E2
Bg
Bd
NC
V
DDQ
GND
V
DDQ
GND
V
DDQ
NC
V
DDQ
GND
V
DDQ
GND
V
DDQ
NC
A
A
TDI
5
A
(16M)
NC
NC
(128M)
NC
V
DD
GND
V
DD
GND
V
DD
GND
V
DD
GND
V
DD
GND
V
DD
NC
NC
(64M)
A
A
6
ADV
W
E1
MCL
V
DD
ZQ
EP2
EP3
M4
MCL
M2
M3
MCH
MCL
V
DD
MCL
A
A1
A0
7
A
(8M)
A
NC
NC
V
DD
GND
V
DD
GND
V
DD
GND
V
DD
GND
V
DD
GND
V
DD
NC
NC
(32M)
A
A
8
E3
Bb
Be
NC
V
DDQ
GND
V
DDQ
GND
V
DDQ
NC
V
DDQ
GND
V
DDQ
GND
V
DDQ
NC
A
A
TDO
9
A
Bf
Ba
GND
V
DDQ
GND
V
DDQ
GND
V
DDQ
NC
V
DDQ
GND
V
DDQ
GND
V
DDQ
GND
NC
A
TCK
10
DQb
DQb
DQb
DQb
DQPf
DQf
DQf
DQf
DQf
CQ1
DQa
DQa
DQa
DQa
DQPa
DQe
DQe
DQe
DQe
11
DQb
DQb
DQb
DQb
DQPb
DQf
DQf
DQf
DQf
CQ1
DQa
DQa
DQa
DQa
DQPe
DQe
DQe
DQe
DQe
11 x 19 Ball BGA—14 x 22 mm
2
Body—1 mm Ball Pitch
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCE INFORMATION
Rev. 00B
11/11/02