IS61NLF51236(32)B/IS61NVF51236(32)B/IS61NVVF51236(32)B
IS61NLF102418B/IS61NVF102436B/IS61NVVF102418B
512K x36 and 1024K x18 18Mb, FLOW THROUGH 'NO WAIT' STATE
BUS SYNCHRONOUS SRAM
FEBRUARY 2014
ADVANCED INFORMATION
FEATURES
•
100 percent bus utilization
•
No wait cycles between Read and Write
•
Internal self-timed write cycle
•
Individual Byte Write Control
•
Single R/W (Read/Write) control pin
•
Clock controlled, registered address, data and
control
•
Interleaved or linear burst sequence control
using MODE input
•
Three chip enables for simple depth
expansion and address pipelining
•
Power Down mode
•
Common data inputs and data outputs
•
/CKE pin to enable clock and suspend
operation
•
JEDEC 100-pin QFP, 165-ball BGA and 119-
ball BGA packages
•
Power supply:
NLF: V
DD
3.3V (± 5%), V
DDQ
3.3V/2.5V (± 5%)
NVF: V
DD
2.5V (± 5%), V
DDQ
2.5V (± 5%)
NVVF: V
DD
1.8V (± 5%), V
DDQ
1.8V (± 5%)
•
JTAG Boundary Scan for BGA packages
•
Commercial, Industrial and Automotive
temperature support
•
Lead-free available
•
For leaded option, please contact ISSI.
FAST ACCESS TIME
Symbol
tKQ
tKC
Parameter
Clock Access
Time
Cycle time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
DESCRIPTION
The 18Meg product family features high-speed,
low-power synchronous static RAMs designed to
provide a burstable, high-performance, 'no wait'
state, device for networking and communications
applications. They are organized as 512K words
by 36 bits and 1024K words by 18 bits, fabricated
with
ISSI's
advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles
are eliminated when the bus switches from read
to write, or write to read. This device integrates a
2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single
monolithic circuit.
All synchronous inputs pass through registers are
controlled by a positive-edge-triggered single
clock input. Operations may be suspended and all
synchronous inputs ignored when Clock Enable,
/CKE is HIGH. In this state the internal device will
hold their previous values.
All Read, Write and Deselect cycles are initiated
by the ADV input. When the ADV is HIGH the
internal burst counter is incremented. New
external addresses can be loaded when ADV is
LOW.
Write cycles are internally self-timed and are
initiated by the rising edge of the clock inputs and
when /WE is LOW. Separate byte enables allow
individual bytes to be written.
A burst mode pin (MODE) defines the order of the
burst sequence. When tied HIGH, the interleaved
burst sequence is selected. When tied LOW, the
linear burst sequence is selected.
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 00A
2/13/2014
1
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