UVPROM, 64KX8, 120ns, CMOS, CDIP28,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Intel |
| package instruction | DIP, DIP28,.6 |
| Reach Compliance Code | unknow |
| Maximum access time | 120 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T28 |
| JESD-609 code | e0 |
| memory density | 524288 bi |
| Memory IC Type | UVPROM |
| memory width | 8 |
| Number of terminals | 28 |
| word count | 65536 words |
| character code | 64000 |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 64KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.0001 A |
| Maximum slew rate | 0.03 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| T27C512-120V10 | QD27C512-150V10 | D27C512-150V10 | D27C512-200V10 | QD27C512-120V10 | D27C512-120V10 | L27C512-120V10 | |
|---|---|---|---|---|---|---|---|
| Description | UVPROM, 64KX8, 120ns, CMOS, CDIP28, | UVPROM, 64KX8, 150ns, CMOS, CDIP28, CERDIP-28 | UVPROM, 64KX8, 150ns, CMOS, CDIP28, | UVPROM, 64KX8, 200ns, CMOS, CDIP28, | UVPROM, 64KX8, 120ns, CMOS, CDIP28, CERDIP-28 | UVPROM, 64KX8, 120ns, CMOS, CDIP28, | UVPROM, 64KX8, 120ns, CMOS, CDIP28, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Intel | Intel | Intel | Intel | Intel | Intel | Intel |
| package instruction | DIP, DIP28,.6 | WDIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | WDIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 |
| Reach Compliance Code | unknow | unknown | unknown | unknown | unknow | unknow | unknow |
| Maximum access time | 120 ns | 150 ns | 150 ns | 200 ns | 120 ns | 120 ns | 120 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T28 | R-GDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-GDIP-T28 | R-XDIP-T28 | R-XDIP-T28 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 524288 bi | 524288 bit | 524288 bit | 524288 bit | 524288 bi | 524288 bi | 524288 bi |
| Memory IC Type | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of terminals | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| word count | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| character code | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| Maximum operating temperature | 85 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 85 °C |
| organize | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC, GLASS-SEALED | CERAMIC | CERAMIC | CERAMIC, GLASS-SEALED | CERAMIC | CERAMIC |
| encapsulated code | DIP | WDIP | DIP | DIP | WDIP | DIP | DIP |
| Encapsulate equivalent code | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE, WINDOW | IN-LINE | IN-LINE | IN-LINE, WINDOW | IN-LINE | IN-LINE |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Maximum standby current | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A |
| Maximum slew rate | 0.03 mA | 0.05 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
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