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IRLR8729TRRPBF

Description
Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size348KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

IRLR8729TRRPBF Overview

Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3

IRLR8729TRRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionROHS COMPLIANT, DPAK-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)74 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.0089 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)260 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 97352B
IRLR8729PbF
IRLU8729PbF
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
Lead-Free
l
RoHS compliant
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max
8.9mΩ
D
Qg
10nC
S
G
S
D
G
D-Pak
I-Pak
IRLR8729PbF IRLU8729PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
58
Units
V
g
Maximum Power Dissipation
g
Maximum Power Dissipation
™
f
41
f
260
55
27
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
0.37
-55 to + 175
300 (1.6mm from case)
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
2.73
50
110
Units
°C/W
–––
–––
–––
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes

through
…
are on page 11
www.irf.com
1
11/23/09

IRLR8729TRRPBF Related Products

IRLR8729TRRPBF
Description Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker International Rectifier ( Infineon )
Parts packaging code TO-252AA
package instruction ROHS COMPLIANT, DPAK-3
Contacts 3
Reach Compliance Code _compli
ECCN code EAR99
Avalanche Energy Efficiency Rating (Eas) 74 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V
Maximum drain current (ID) 50 A
Maximum drain-source on-resistance 0.0089 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA
JESD-30 code R-PSSO-G2
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 2
Operating mode ENHANCEMENT MODE
Maximum operating temperature 175 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 260 A
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN OVER NICKEL
Terminal form GULL WING
Terminal location SINGLE
Maximum time at peak reflow temperature 30
transistor applications SWITCHING
Transistor component materials SILICON
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