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BD240C

Description
2A, 100V, PNP, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size87KB,6 Pages
ManufacturerJ.W. Miller ( Bourns )
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BD240C Overview

2A, 100V, PNP, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN

BD240C Parametric

Parameter NameAttribute value
MakerJ.W. Miller ( Bourns )
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
BD240, BD240A, BD240B, BD240C
PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD241 Series
30 W at 25°C Case Temperature
2 A Continuous Collector Current
4 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
q
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD240
Collector-emitter voltage (R
BE
= 100
Ω)
BD240A
BD240B
BD240C
BD240
Collector-emitter voltage (I
C
= -30 mA)
BD240A
BD240B
BD240C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CER
SYMBOL
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-2
-4
-0.6
30
2
32
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

BD240C Related Products

BD240C
Description 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
Maker J.W. Miller ( Bourns )
Parts packaging code SFM
package instruction FLANGE MOUNT, R-PSFM-T3
Contacts 3
Reach Compliance Code unknow
ECCN code EAR99
Shell connection COLLECTOR
Maximum collector current (IC) 2 A
Collector-emitter maximum voltage 100 V
Configuration SINGLE
Minimum DC current gain (hFE) 15
JEDEC-95 code TO-220AB
JESD-30 code R-PSFM-T3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type PNP
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON
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