BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD539 Series
45 W at 25°C Case Temperature
5 A Continuous Collector Current
Customer-Specified Selections Available
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD540
Collector-base voltage (I
E
= 0)
BD540A
BD540B
BD540C
BD540
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD540A
BD540B
BD540C
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-5
45
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
°C
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD540
V
(BR)CEO
I
C
= -30 mA
(see Note 4)
V
CE
= -40 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -60 V
V
CE
= -80 V
V
CE
= -100 V
I
CEO
I
EBO
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= -0.5 A
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
-1 A
-3 A
-1 A
-3 A
-5 A
-3 A
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
(see Notes 4 and 5)
(see Notes 4 and 5)
40
30
12
-0.25
-0.8
-1.5
-1.25
V
V
I
B
= 0
BD540A
BD540B
BD540C
BD540
BD540A
BD540B
BD540C
BD540/540A
BD540B/540C
MIN
-40
-60
-80
-100
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
-1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
I
B
= -125 mA
I
B
= -375 mA
I
B
=
V
CE
=
-1 A
-4 V
V
CE(sat)
V
BE
h
fe
V
CE
= -10 V
V
CE
= -10 V
I
C
= -0.5 A
I
C
= -0.5 A
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.78
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -1 A
V
BE(off)
= 4.3 V
I
B(on)
= -0.1 A
R
L
= 30
Ω
†
MIN
I
B(off)
= 0.1 A
t
p
= 20 µs, dc
≤
2%
TYP
0.3
1
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
t
p
= 300 µs, duty cycle < 2%
TCS632AH
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
TCS632AB
T
C
= 25°C
T
C
= 80°C
h
FE
- DC Current Gain
-1·0
100
-0·1
I
C
= -100 mA
I
C
= -300 mA
I
C
= -1 A
I
C
= -3 A
-1·0
-10
-100
-1000
10
-0·01
-0·1
-1·0
-10
-0·01
-0·1
I
C
- Collector Current - A
I
B
- Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1
V
CE
= -4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
-0·9
TCS632AC
-0·8
-0·7
-0·6
-0·5
-0·01
-0·1
-1
-10
I
C
- Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-10
SAS632AE
I
C
- Collector Current - A
-1·0
-0·1
-0·01
-1·0
BD540
BD540A
BD540B
BD540C
-10
-100
-1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
50
P
tot
- Maximum Power Dissipation - W
TIS631AC
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
PRODUCT
INFORMATION
4
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
PRODUCT
INFORMATION
5
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