BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD546 Series
85 W at 25°C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
15 A Continuous Collector Current
Customer-Specified Selections Available
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD545
Collector-base voltage (I
E
= 0)
BD545A
BD545B
BD545C
BD545
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD545A
BD545B
BD545C
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
40
60
80
100
40
60
80
100
5
15
85
3.5
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
°C
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD545
V
(BR)CEO
I
C
= 30 mA
(see Note 4)
V
CE
= 40 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
I
CEO
I
EBO
V
CE
= 30 V
V
CE
= 60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
V
CE
=
5V
4V
4V
4V
2A
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
1A
5A
5A
(see Notes 4 and 5)
60
25
10
(see Notes 4 and 5)
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
0.8
1
1.8
V
V
I
B
= 0
BD545A
BD545B
BD545C
BD545
BD545A
BD545B
BD545C
BD545/545A
BD545B/545C
MIN
40
60
80
100
0.4
0.4
0.4
0.4
0.7
0.7
1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
I
C
= 10 A
I
C
= 10 A
I
C
= 10 A
I
C
= 0.5 A
I
C
= 0.5 A
V
CE(sat)
V
BE
h
fe
I
B
= 625 mA
V
CE
= 10 V
V
CE
= 10 V
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.47
35.7
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 6 A
V
BE(off)
= -4 V
I
B(on)
= 0.6 A
R
L
= 5
Ω
†
MIN
I
B(off)
= -0.6 A
t
p
= 20 µs, dc
≤
2%
TYP
0.6
1
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= 4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
TCS633AJ
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
10
TCS633AB
I
C
= 1 A
I
C
= 3 A
I
C
= 6 A
I
C
= 10 A
h
FE
- DC Current Gain
100
1·0
10
0·1
1·0
0·1
1·0
I
C
- Collector Current - A
10
0·01
0·01
0·1
1·0
10
I
B
- Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·8
V
CE
= 4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
1·6
TCS633AC
1·4
1·2
1·0
0·8
0·6
0·1
1
I
C
- Collector Current - A
10
Figure 3.
PRODUCT
INFORMATION
3
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS633AE
I
C
- Collector Current - A
10
1·0
0·1
BD545
BD545A
BD545B
BD545C
10
100
1000
0·01
1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
P
tot
- Maximum Power Dissipation - W
TIS633AC
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
PRODUCT
INFORMATION
4
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
4,1
4,0
15,2
14,7
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
1,30
1,10
2
3
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
PRODUCT
INFORMATION
5
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