BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDW63, BDW63A, BDW63B, BDW63C and
BDW63D
60 W at 25°C Case Temperature
B
TO-220 PACKAGE
(TOP VIEW)
q
q
q
1
2
3
6 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 2 A
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDW64
BDW64A
Collector-base voltage (I
E
= 0)
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW64B
BDW64C
BDW64D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-6
-0.1
60
2
50
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
BDW64
V
(BR)CEO
Collector-emitter
breakdown voltage
BDW64A
I
C
= -30 mA
I
B
= 0
(see Note 5)
BDW64B
BDW64C
BDW64D
V
CE
= -30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
CBO
Collector cut-off
current
V
CB
= -120 V
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
I
EBO
h
FE
V
BE(on)
V
CE(sat)
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
I
E
=
-5 V
-3 V
-3 V
-3 V
-12 mA
-60 mA
-6 A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= -2 A
I
C
= -6 A
I
C
= -2 A
I
C
= -2 A
I
C
= -6 A
I
B
= 0
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
100
-2.5
-2.5
-4
-3.5
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
MIN
-45
-60
-80
-100
-120
-0.5
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-0.2
-5
-5
-5
-5
-5
-2
20000
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.08
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -3 A
V
BE(off)
= 4.5 V
I
B(on)
= -12 mA
R
L
= 10
Ω
†
MIN
I
B(off)
= 12 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
40000
TCS125AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
-1·5
TCS125AE
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
-1·0
1000
-0·5
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
0
-0·5
-1·0
I
C
- Collector Current - A
-10
V
CE
= -3 V
t
p
= 300 µs, duty cycle < 2%
100
-0·5
-1·0
I
C
- Collector Current - A
-10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS125AF
-2·0
-2·5
-1·0
-1·5
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
I
C
- Collector Current - A
-10
Figure 3.
PRODUCT
INFORMATION
3
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-10
SAS125AC
I
C
- Collector Current - A
-1·0
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
-0·1
-1·0
-10
-100
-1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS120AB
Figure 5.
PRODUCT
INFORMATION
4
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
PRODUCT
INFORMATION
5
Embedded System
京公网安备 11010802033920号
EEWORLD
