SEMICONDUCTOR
RoHS
6T Series
RoHS
TRIACs, 6A
Snubberless, Logic Level and Standard
MAIN FEATURES
2
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT(Q1)
VALUE
6
600 to 1000
5 to 50
UNIT
A
1
2
3
3
2
V
mA
1
2
TO-251
(I-PAK)
(6TxxF)
TO-252
(D-PAK)
(6TxxG)
DESCRIPTION
The 6T
triac series is suitable for general purpose AC
switching. They can be used as an ON/OFF function in
applications such as static relays, heating regulation,
induction motor starting circuits... or for phase control
operation in light dimmers, motor speed controllers,...
The snubberless and logic level versions are specially
recommended for use on inductive loads, thanks to their
high commutation performances.
By using an internal ceramic pad, the 6T series provides
voltage insulated tab (rated at 2500V
RMS
) complying
with UL standards (File ref. :E320098)
A2
1
A1
A2
G
2
3
TO-220AB
(non-Insulated)
(6TxxA)
TO-220AB
(lnsulated)
(6TxxAI)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current
(full
sine wave)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
I t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
2
VALUE
6
UNIT
A
T
c
= 110ºC
T
c
= 105ºC
t = 20 ms
t = 16.7 ms
60
63
21
T
j
=125ºC
T
j
=125ºC
50
4
1
- 40
to
+ 150
ºC
- 40
to
+ 125
A
A
2
s
A/µs
A
W
I
TSM
t p = 10 ms
F =100 Hz
T
p
=20 µs
T
j
=125ºC
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Page 1 of 6
SEMICONDUCTOR
RoHS
6T Series
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
6Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 200 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T
j
= 125°C
(dV/dt)c = 0.1 V/µs
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Without snubber
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
MIN.
MAX.
15
MIN.
20
2.7
1.2
-
TEST CONDITIONS
QUADRANT
TW
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
10
10
15
25
30
40
3.5
2.4
-
1.3
0.2
40
50
60
400
-
-
3.5
55
70
mA
80
1000
-
-
5.3
A/ms
V/µs
V
V
mA
MAX.
05
SW
10
CW
35
BW
50
mA
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
6Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 200 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c = 2.7 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/d
t(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
25
40
80
200
5
C
MAX.
25
50
1.3
0.2
50
50
100
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 8.5 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
=
V
RRM
T
j
= 125°C
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
1
mA
MAX.
MAX.
MAX.
VALUE
1.55
0.85
60
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
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Page 2 of 6
SEMICONDUCTOR
RoHS
6T Series
RoHS
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(j-a)
Junction to case
(AC)
Junction to ambient
TO-220AB, TO-251, TO-252
TO-220AB Insulated
TO-220AB, TO-251, TO-252
TO-220AB Insulated
VALUE
1.8
2.7
60
UNIT
°C/W
°C/W
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
6TxxA-B/ 6TxxAl-B
6TxxA-BW/6TxxAl-BW
6TxxA-C/6TxxAl-C
6TxxA-CW/6TxxAl-CW
6TxxA-SW/6TxxAl-SW
6TxxA-TW/6TxxAI-TW
6TxxF-BW
6TxxG-BW
6TxxF-CW
6TxxG-CW
6TxxF-SW
6TxxG-SW
6TxxF-B
6TxxG-B
6TxxF-C
6TxxG-C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
50
mA
50
mA
25
mA
35
mA
10
mA
5
mA
50
mA
50
mA
35
mA
35
mA
10
mA
10
mA
50
mA
50
mA
25
mA
25
mA
Standard
Snubberless
Standard
Snubberless
Logic level
Logic level
Snubberless
Snubberless
Snubberless
Snubberless
Logic level
Logic level
Standard
Standard
Standard
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
I-PAK
D-PAK
I-PAK
D-PAK
I-PAK
D-PAK
I-PAK
D-PAK
I-PAK
D-PAK
SENSITIVITY
TYPE
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
6TxxA-yy
6TxxAI-yy
6TxxF-yy
6TxxG-yy
Note:
xx
=
voltage, yy
=
sensitivity
MARKING
6TxxA-yy
6TxxAI-yy
6TxxF-yy
6TxxG-yy
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-251(I-PAK)
TO-252(D-PAK)
WEIGHT
2.0g
2.3g
0.40g
0.38g
,
BASE Q TY
50
50
80
80
DELIVERY MODE
Tube
Tube
Tube
Tube
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Page 3 of 6
SEMICONDUCTOR
RoHS
6T Series
RoHS
ORDERING INFORMATION SCHEME
6
Current
6 = 6A
T 06
A - BW
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
AF= TO-220F(ISOWAT TO-220AB, insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
I
GT
Sensitivity
B
= 50mA
Standard
C
= 25mA
Standard
SW
= 10mA
Logic Level
BW
= 50mA
Snubberless
CW
= 35mA
Snubberless
TW
= 5mA
Logic Level
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
P(W)
8
7
6
5
4
7
6
5
Fig.2 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
4
3
TO-220AB
(Insulated)
3
2
1
0
0
1
2
3
4
5
6
2
1
TO-251/TO-252
TO-220AB
I
T(RMS)
(A)
T
C
(°C)
0
0
25
50
75
100
125
Fig.3 Relative variation of thermal impedance
versus pulse duration.
K=[Zth
/R
th
]
1E+0
Zth
(
j
-
c
)
Fig.4 On-state characteristics (maximum values).
I
TM
(A)
100
T
j
max.
V
t0
= 0.85V
R
d
= 60
m
Ω
T
j
=
T
j
max.
Zth
(
j
-
a
)
1E-1
10
t
p
(s)
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
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Page 4 of 6
SEMICONDUCTOR
RoHS
6T Series
RoHS
Fig.5 Surge peak on-state current versus number
of cycles.
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
I
TSM
(A),
I t
(A
s)
1000
T
j
initial=25°C
2
2
I
TSM
(A)
70
60
t=20ms
50
40
30
20
10
0
1
10
Repetitive
T
c
=105°C
Non repetitive
T
j
initial=25°C
One cycle
dI/dt limitation:
50A/µs
I
TSM
100
I
2
t
Number of cycles
10
t
p
(ms)
0.01
0.10
1.00
10.00
100
1000
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Snubberless & Logic Level Types
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
GT
,I
H
,I
L
[T
j
] /
I
GT
,I
H
,I
L
[T
j
=25
°C
]
2.5
2.0
I
GT
1.5
IH
&
I
L
TW
BW/CW
SW
1.0
0.5
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
(dV/dt)c (V/µs)
0.1
1.0
10.0
100.0
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)C (typical values)
(Standard types).
Fig.10 Relative variation of critical rate decrease of
main current versus junction temperature .
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10.0
100.0
B
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
C
4
3
2
1
(dV/dt)c (V/µs)
0
0
25
50
T
j
(°C)
75
100
125
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Page 5 of 6
Embedded System
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