2SK617 datasheet, PDF - EEWORLD Datasheet

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2SK617: DescriptionDrain Source Voltage-: VDSS= 800V(Min); File Size62KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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Drain Source Voltage-: VDSS= 800V(Min)

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INCHANGE Semiconductor

isc

Product Specification

isc N-Channel MOSFET Transistor

2SK617

FEATURES

·Drain

Current

–I

=1A@ T

=25℃

·Drain

Source Voltage-

: V

DSS

= 800V(Min)

DESCRIPTION

·Designed

for low voltage, high speed power switching

applications such as switching regulators, converters,

solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS(T

=25℃)

SYMBOL

DSS

stg

PARAMETER

Drain-Source Voltage

Gate-Source Voltage-Continuous

Drain Current-Continuous

Total Dissipation @T

=25℃

Max. Operating Junction Temperature

Storage Temperature

VALUE

800

±20

150

-55~150

UNIT

℃

THERMAL CHARACTERISTICS

SYMBOL

th j-c

th j-a

PARAMETER

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

MAX

1.25

62.5

UNIT

℃/W

isc website：www.iscsemi.cn

PDF pdfFactory Pro

isc & iscsemi is registered trademark

www.fineprint.cn

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