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AT49LV001N-70PI

Description
1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
Categorystorage    storage   
File Size118KB,20 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric View All

AT49LV001N-70PI Overview

1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

AT49LV001N-70PI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAtmel (Microchip)
Parts packaging codeDIP
package instruction0.600 INCH, PLASTIC, DIP-32
Contacts32
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time70 ns
startup blockBOTTOM
command user interfaceYES
Data pollingYES
JESD-30 codeR-PDIP-T32
JESD-609 codee0
length42.037 mm
memory density1048576 bi
Memory IC TypeFLASH
memory width8
Humidity sensitivity level1
Number of functions1
Number of departments/size1,2,1,1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height4.826 mm
Department size16K,8K,32K,64K
Maximum standby current0.00005 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width15.24 mm
Features
Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)
Fast Read Access Time - 70 ns
Internal Program Control and Timer
Sector Architecture
– One 16K Byte Boot Block with Programming Lockout
– Two 8K Byte Parameter Blocks
– Two Main Memory Blocks (32K, 64K) Bytes
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30
µ
s/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50
µ
A CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV/LV001(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory.
Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70
ns with power dissipation of just 90 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 50
µA.
For the
(continued)
1-Megabit
(128K x 8)
Single 2.7-Volt
Battery-Voltage
Flash Memory
AT49BV001
AT49LV001
AT49BV001N
AT49LV001N
AT49BV001T
AT49LV001T
AT49BV001NT
AT49LV001NT
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
RESET
I/O0 - I/O7
DC
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
RESET
Data Inputs/Outputs
Don’t Connect
No Connect
PLCC Top View
A12
A15
A16
RESET*
VCC
WE
NC
A11
A9
A8
A13
A14
NC
WE
VCC
*RESET
A16
A15
A12
A7
A6
A5
A4
DIP Top View
*RESET
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
VSOP Top View (8 x 14mm) or
TSOP Top View (8 x 20mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Rev. 1110A–07/98
*Note: This pin is a DC on the AT49BV001N(T) and AT49LV001N(T).
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