EEWORLDEEWORLDEEWORLD

Part Number

Search

72021

Description
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
File Size70KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Compare View All

72021 Overview

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4830ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
7.5
6.5
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
D
D
D
D
LITTLE FOOTr
Plus
Schottky
Si4830DY Pin Compatible
PWM Optimized
100% R
g
Tested
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
APPLICATIONS
D
Asymmetrical Buck-Boost DC/DC Converter
I
F
(A)
2.0
D
1
V
SD
(V)
Diode Forward Voltage
0.50 V @ 1.0 A
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
Ordering Information: Si4830ADY—E3 (Lead Free)
Si4830ADY-T1—E3 (Lead Free with Tape and Reel)
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
30
"20
7.5
6.0
30
1.7
2.0
1.3
−55
to 150
Steady State
Unit
V
5.7
4.6
0.9
1.1
0.7
W
_C
A
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72021
S-32621—Rev. D, 29-Dec-03
www.vishay.com
t
v
10 sec
Steady-State
Steady-State
Schottky
Typ
53
93
35
Symbol
R
thJA
R
thJF
Typ
52
93
35
Max
62.5
110
40
Max
62.5
110
40
Unit
_C/W
C/W
1

72021 Related Products

72021 SI4830ADY
Description Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
[Solved] Please ask a simple question about burning
[i=s] This post was last edited by yanda5zi on 2015-1-27 21:54 [/i] I just received the STM32F429 development board I bought from the forum, but when I used the STM32 ST-LINK Utility to burn the BIN f...
眼大5子 stm32/stm8
Polar SI9000_V7_1
Polar SI9000_V7_1 [[i] This post was last edited by dreamerjun on 2009-12-31 22:45[/i]]...
dreamerjun PCB Design
FR5739 crystal oscillator capacitor configuration problem!
FR5739 does not have internally configured capacitors like g2553, so when connected to an external crystal oscillator, an external capacitor is required to start oscillation: (a) For XT1DRIVE = {0}, C...
wow1919 TI Technology Forum
How are we preparing for the game on the 13th? Let's discuss it.
[i=s]This post was last edited by paulhyde on 2014-9-15 03:53[/i] You are not allowed to bring anything. Is the minimum system board a Renesas one? :cold:...
clouds Electronics Design Contest
About NandFlash driver
Driver for Samsung flash, model K5E1G13ACA. Why is the data misaligned when I read it? For example, I write 0x11 to all the pages with number 0xFF, and then read it out. The result is (I save the read...
spy231 Embedded System
I debugged the DSPBIOS routine provided by TI
[b] There is an mbxtest program in the DSP BIOS routine provided by TI, which is probably used to teach the use of mailboxes. The program has three write tasks and one read task, with the same priorit...
三九天使 DSP and ARM Processors

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2851  1611  1780  143  1372  58  33  36  3  28 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号