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BZX84B10

Description
Zener Diode, Case Style : SOT-23; Pd (W) : 0.225; Vz (V) Min: 9.8; Vz (V) Nom: 10; Vz (V) Max: 10.2; Vz @lzt (mA): 5; Leakage Current IR (uA): 0.2; Leakage Current VR (V): 7
CategoryDiscrete semiconductor    Zener diode   
File Size2MB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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BZX84B10 Overview

Zener Diode, Case Style : SOT-23; Pd (W) : 0.225; Vz (V) Min: 9.8; Vz (V) Nom: 10; Vz (V) Max: 10.2; Vz @lzt (mA): 5; Leakage Current IR (uA): 0.2; Leakage Current VR (V): 7

BZX84B10 Parametric

Parameter NameAttribute value
Case StyleSOT-23
Pd(W)0.225
VZ(Min)9.80_
VZ(Nom)10.0_
VZ(Max)10.20_
IZT(mA)5.0_
IR(uA)0.20_
VR(V)7.0_
classDiodes
BZX84B2V4-BZX84B51
Surface Mount Zener Diodes
B:2% tolerance
SOT-23
Features
Planar Die Construction.
350mw Power Dissipation.
Zener Voltages From 2.4V -51V
Ideally Suited For Automated Assembly Prcesses.
Applications
350Mw Surface mount zener diode
Dimensions in inches and (millimeters)
Ordering Information
Type No.
BZX84B2V4-BZX84B51
Marking
See Table on page2
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Power Dissipation
Symbol
P
d
Value
350
Unit
mW
Thermal Resistance, Junction to Ambient Air
R
θjA
357
℃/W
Operating and Storage Temperature Range
T
j,
T
stg
-65 to+150
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
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