High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
IXBT12N300
IXBH12N300
V
CES
= 3000V
I
C110
= 12A
V
CE(sat)
≤
3.2V
TO-268 (IXBT)
G
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
High Blocking Voltage
International Standard Packages
Anti-Parallel Diode
Low Conduction Losses
Advantages
V
5.0
V
25
μA
1 mA
±100
2.8
T
J
= 125°C
3.5
3.2
nA
V
V
Low Gate Drive Requirement
High Power Density
Applications:
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
Features
TO-247 (IXBH)
E
C
(Tab)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
C
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 30Ω
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
3000
3000
± 20
± 30
30
12
100
I
CM
= 98
1500
160
-55 ... +150
150
-55 ... +150
G
C
E
C
(Tab)
C
= Collector
Tab = Collector
G = Gate
E = Emiiter
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
300
260
1.13/10
4
6
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
GE
= 0V
I
C
= 250μA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
, V
GE
= 0V
V
CE
= 0V, V
GE
= ± 20V
I
C
= 12A, V
GE
= 15V, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
3000
3.0
© 2012 IXYS CORPORATION, All Rights Reserved
DS100120A(10/12)
IXBT12N300
IXBH12N300
Symbol Test Conditions
(
T
J
= 25°C Unless Otherwise Specified)
g
fS
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCS
TO-247
0.21
Resistive Switching Times, T
J
= 25°C
I
C
= 12A, V
GE
= 15V
V
CE
= 1250V, R
G
= 10
Ω
Resistive Switching Times, T
J
= 125°C
I
C
= 12A, V
GE
= 15V
V
CE
= 1250V, R
G
= 10
Ω
I
C
= 12A, V
GE
= 15V, V
CE
= 1000V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 12A, V
CE
= 10V, Note 1
Characteristic Values
Min.
Typ.
Max.
6.5
10.8
1290
56
19
62
13
8.5
64
140
180
540
65
395
175
530
0.78
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
°C/W
°C/W
Terminals: 1 - Gate
3 - Emitter
2,4 - Collector
TO-268 Outline
TO-247 Outline
Reverse Diode
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
V
F
t
rr
I
RM
I
F
= 12A, V
GE
= 0V
I
F
= 6A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
1.4
21
Characteristic Values
Min.
Typ.
Max.
2.1
V
μs
A
e
1
2
3
∅
P
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Note
1: Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXBT12N300
IXBH12N300
Fig. 1. Output Characteristics @ T
J
= 25ºC
24
V
GE
= 25V
20V
15V
240
V
GE
= 25V
200
20V
160
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
20
16
I
C
- Amperes
I
C
-
Amperes
10V
12
15V
120
8
80
10V
4
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
40
5V
0
0
5
10
15
20
25
30
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
24
V
GE
= 25V
20V
15V
1.8
V
GE
= 15V
1.6
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
20
I
C
= 24A
16
V
CE(sat)
- Normalized
I
C
- Amperes
1.4
I
C
= 12A
12
10V
1.2
8
1.0
I
C
= 6A
4
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.8
0.6
-50
-25
0
25
50
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
6.0
5.5
5.0
28
T
J
= 25ºC
40
36
32
Fig. 6. Input Admittance
I
C
-
Amperes
V
CE
- Volts
4.5
4.0
3.5
3.0
2.5
6A
2.0
5
7
9
11
13
15
17
19
21
23
25
12A
24
20
16
12
8
4
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
T
J
= 125ºC
25ºC
- 40ºC
I
C
= 24A
V
GE
- Volts
V
GE
- Volts
© 2012 IXYS CORPORATION, All Rights Reserved
IXBT12N300
IXBH12N300
Fig. 7. Transconductance
18
16
14
25ºC
T
J
= - 40ºC
36
32
28
24
Fig. 8. Forward Voltage Drop of Intrinsic Diode
g
f s
-
Siemens
12
I
F
- Amperes
125ºC
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
20
16
12
8
4
0
0
0.5
1
T
J
= 25ºC
T
J
= 125ºC
1.5
2
2.5
3
I
C
- Amperes
V
F
- Volts
Fig. 9. Gate Charge
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
V
CE
= 1kV
I
C
= 12A
10,000
f = 1 MHz
Fig. 10. Capacitance
Capacitance - PicoFarads
I
G
= 10mA
1,000
V
GE
- Volts
Cies
100
Coes
Cres
10
0
5
10
15
20
25
30
35
40
Q
G
- NanoCoulombs
V
CE
- Volts
Fig. 11. Reverse-Bias Safe Operating Area
1
100
Fig. 12. Maximum Transient Thermal Impedance
80
60
Z
(th)JC
- ºC / W
T
J
= 125ºC
R
G
= 30Ω
dv / dt < 10V / ns
1000
1500
2000
2500
3000
I
C
- Amperes
0.1
40
20
0
500
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
CE
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT12N300
IXBH12N300
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
600
R
G
= 10Ω , V
GE
= 15V
500
V
CE
= 1250V
500
600
R
G
= 10Ω , V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
I
300
I
200
C
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
t
r
- Nanoseconds
C
= 24A
t
r
- Nanoseconds
400
400
300
= 12A
200
T
J
= 25ºC
100
100
0
25
35
45
55
65
75
85
95
105
115
125
0
6
8
10
12
14
16
18
20
22
24
T
J
- Degrees Centigrade
I
C
- Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
750
700
650
150
800
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
200
140
130
120
110
700
t
r
V
CE
= 1250V
t
d(on)
- - - -
t
f
V
CE
= 1250V
t
d(off)
- - - -
190
T
J
= 125ºC, V
GE
= 15V
R
G
= 10Ω, V
GE
= 15V
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
600
550
500
450
400
350
300
250
10
20
30
40
50
60
70
80
90
I
C
= 24A, 12A
t
f
- Nanoseconds
600
180
t
d(on)
- Nanoseconds
100
90
80
70
60
50
100
500
I
C
= 12A
170
400
160
300
I
C
= 24A
150
200
25
35
45
55
65
75
85
95
105
115
140
125
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
1400
1200
1000
340
700
650
600
260
220
180
140
T
J
= 125ºC, 25ºC
200
0
6
8
10
12
14
16
18
20
22
24
100
60
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
900
t
f
V
CE
= 1250V
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
300
t
f
V
CE
= 1250V
t
d(off
)
- - - -
800
700
T
J
= 125ºC, V
GE
= 15V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
550
500
450
400
350
300
250
10
20
30
40
50
60
70
80
90
I
C
= 12A
600
500
400
300
200
100
0
100
800
600
400
I
C
= 24A
I
C
- Amperes
R
G
- Ohms
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_12N300(4P)06-05-12
京公网安备 11010802033920号
EEWORLD
