Preliminary Technical Information
X-Class HiPerFET
TM
Power MOSFET
IXFT32N100XHV
IXFH32N100X
IXFK32N100X
V
DSS
I
D25
R
DS(on)
TO-268HV
(IXFT..HV)
= 1000V
= 32A
220m
N-Channel Enhancement Mode
Avalanche Rated
G
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247 & TO-264)
TO-268HV
TO-247
TO-264
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
1000
1000
30
40
32
64
16
2
15
890
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
4
6
10
V
V
V
V
A
A
A
J
V/ns
W
C
C
C
°C
°C
Nm/lb.in
g
g
g
G
D
S
G = Gate
S = Source
Features
D (Tab)
TO-247
(IXFH)
G
D
S
D (Tab)
TO-264
(IXFK)
D (Tab)
D
= Drain
Tab = Drain
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
1000
3.5
6.0
V
V
Advantages
High Power Density
Easy to Mount
Space Savings
100
nA
50
A
3 mA
220 m
Applications
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100906B(10/18)
© 2018 IXYS CORPORATION, All Rights Reserved.
IXFT32N100XHV
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
R
Gi
C
iss
C
oss
C
rss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-247
TO-264
0.21
0.15
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Effective Output Capacitance
V
GS
= 0V
Energy related
V
DS
= 0.8 • V
DSS
Time related
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 16A, Note 1
Gate Input Resistance
Characteristic Values
Min.
Typ.
Max
14
23
0.6
4075
520
10
140
585
29
12
80
12
130
27
70
S
pF
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.14
C/W
C/W
C/W
IXFH32N100X
IXFK32N100X
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 16A, -di/dt = 100A/μs
V
R
= 100V
200
1.5
15
Characteristic Values
Min.
Typ.
Max
32
128
1.4
A
A
V
ns
μC
A
Note 1. Pulse test, t
300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFT32N100XHV
IXFH32N100X
IXFK32N100X
o
Fig. 1. Output Characteristics @ T
J
= 25 C
32
V
GS
= 10V
28
24
8V
70
60
7V
80
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
V
GS
= 10V
9V
I
D
- Amperes
16
12
8
4
5V
0
0
1
2
3
4
5
6
7
8
9
6V
I
D
- Amperes
20
50
40
30
8V
7V
20
10
0
0
10
20
6V
5V
30
40
50
60
V
DS
- Volts
V
DS
- Volts
o
Fig. 3. Output Characteristics @ T
J
= 125 C
32
28
24
V
GS
= 10V
8V
7V
4.2
3.8
3.4
Fig. 4. R
DS(on)
Normalized to I
D
= 16A Value vs.
Junction Temperature
V
GS
= 10V
I
D
- Amperes
20
16
12
8
5V
4
4V
0
0
5
10
15
20
25
6V
R
DS(on)
- Normalized
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
I
D
= 16A
I
D
= 32A
V
DS
- Volts
T
J
- Degrees Centigrade
5.0
4.5
4.0
Fig. 5. R
DS(on)
Normalized to I
D
= 16A Value vs.
Drain Current
V
GS
= 10V
1.3
1.2
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
R
DS(on)
- Normalized
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
20
T
J
= 125 C
o
BV
DSS
/ V
GS(th)
- Normalized
1.1
1.0
0.9
0.8
BV
DSS
T
J
= 25 C
o
V
GS(th)
0.7
0.6
30
40
50
60
70
-60
-40
-20
0
20
40
60
80
100
120
140
160
I
D
- Amperes
T
J
- Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved.
IXFT32N100XHV
IXFH32N100X
IXFK32N100X
Fig. 7. Maximum Drain Current vs. Case Temperature
35
30
25
45
40
35
30
20
15
10
10
5
0
-50
-25
0
25
50
75
100
125
150
5
0
3.5
4.0
4.5
V
DS
= 20V
Fig. 8. Input Admittance
- 40 C
o
25 C
T
J
= 125 C
o
o
- Amperes
- Amperes
I
D
25
20
15
I
D
5.0
5.5
6.0
6.5
7.0
7.5
8.0
T
C
- Degrees Centigrade
V
GS
- Volts
Fig. 9. Transconductance
45
40
35
30
25
20
15
10
20
5
0
0
5
10
15
20
25
30
35
40
45
0
0.3
125 C
o
Fig. 10. Forward Voltage Drop of Intrinsic Diode
120
V
DS
= 20V
T
J
= - 40 C
o
100
g
f s
- Siemens
80
25 C
- Amperes
I
S
o
60
40
T
J
= 125 C
T
J
= 25 C
o
o
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
I
D
- Amperes
V
SD
- Volts
Fig. 11. Gate Charge
10
V
DS
= 500V
I
G
= 10mA
100,000
Fig. 12. Capacitance
Capacitance - PicoFarads
8
I
D
= 16A
10,000
Ciss
V
GS
- Volts
6
1,000
Coss
100
4
2
10
f
= 1 MHz
0
0
20
40
60
80
100
120
140
1
1
10
100
Crss
1000
Q
G
- NanoCoulombs
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT32N100XHV
Fig. 13. Output Capacitance Stored Energy
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
0.01
10
100
R
DS(
on
)
Limit
IXFH32N100X
IXFK32N100X
Fig. 14. Forward-Bias Safe Operating Area
25μs
100μs
E
OSS
- MicroJoules
I
D
- Amperes
1
1ms
0.1
T
J
= 150 C
T
C
= 25 C
Single Pulse
o
o
10ms
100ms
DC
700
Fig. 15. Maximum Transient Thermal Impedance
800
900
1000
10
100
1,000
1
V
DS
- Volts
V
DS
- Volts
Fig. 15. Maximum Transient Thermal Impedance
0.3
aaaaa
0.1
Z
(th)JC
- K / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2018 IXYS CORPORATION, All Rights Reserved.
IXYS_F_32N100X (S8-DA01) 10-02-18-A
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