L2SA1576ART3G datasheet, PDF - EEWORLD Datasheet

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L2SA1576ART3G: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), PNP,; CategoryDiscrete semiconductor The transistor; File Size115KB，4 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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L2SA1576ART3G Overview

Small Signal Bipolar Transistor, 0.15A I(C), PNP,

L2SA1576ART3G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.15 A
Configuration	Single
Minimum DC current gain (hFE)	180
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
surface mount	YES

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LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

We declare that the material of product compliance with RoHS requirements.

ORDERING INFORMATION

Device

L2SA1576AQLT1G Series

L2SA1576AQLT3G Series

Package

SC-70

Shipping

3000/Tape & Reel

10000/Tape & Reel

SC-70/SOT– 323

L2SA1576AQT1G Series

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Collector power dissipation

Junction temperature

Storage temperature

Symbol

CEO

CBO

EBO

Value

–50

–60

–6.0

–150

0.15

150

-55 ~+150

Unit

BASE

COLLECTOR

stg

mAdc

°C

EMITTER

DEVICE MARKING

L2SA1576AQT1G =FQ L2SA1576ART1G=FR L2SA1576AST1G =FS

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted.)

Characteristic

Collector–Emitter Breakdown Voltage

= –1 mA)

Emitter–Base Breakdown Voltage

= – 50

µA)

Collector–Base Breakdown Voltage

= – 50

µA)

Collector Cutoff Current

= – 60 V)

Emitter cutoff current

= – 6 V)

Collector-emitter saturation voltage

/ I

= – 50 mA / – 5m A)

DC current transfer ratio

= – 6 V, I

= –1mA)

Transition frequency

= – 12 V, I

= 2mA, f=30MHz )

Output capacitance

= – 12 V, I

= 0A, f =1MHz )

Symbol

(BR)CEO

Min

– 50

–6

– 60

—

120

—

Typ

—

––

140

4.0

Max

—

– 0.1

-0.5

560

––

5.0

Unit

µA

––

MHz

(BR)EBO

(BR)CBO

CBO

EBO

CE(sat)

values are classified as follows:

hFE

120~270

180~390

270~560

Rev.O 1/4

L2SA1576ART3G Related Products

	L2SA1576ART3G	L2SA1576AQT1G	L2SA1576AQT3G	L2SA1576ART1G	L2SA1576AST1G	L2SA1576AST3G
Description	Small Signal Bipolar Transistor, 0.15A I(C), PNP,	Small Signal Bipolar Transistor, 0.15A I(C), PNP,	Small Signal Bipolar Transistor, 0.15A I(C), PNP,	Small Signal Bipolar Transistor, 0.15A I(C), PNP,	Small Signal Bipolar Transistor, 0.15A I(C), PNP,	Small Signal Bipolar Transistor, 0.15A I(C), PNP,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Configuration	Single	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	180	120	120	180	270	270
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
surface mount	YES	YES	YES	YES	YES	YES
Base Number Matches	-	1	1	1	1	1

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