GC4701 - GC4750
TM
®
CONTROL DEVICES – LIMITER DIODES
RoHS Compliant
DESCRIPTION
0B
KEY FEATURES
Available as packaged devices or
as chips for hybrid applications
The GC4700 series diodes are specially processed PIN diodes designed
for use in passive or active limiters at frequencies through Ku band.
Thirteen categories of devices are offered for flexibility in design of low,
medium and high power limiters.
Low VB limiters have thinner I regions for faster turn-on time and better
flat leakage. Microsemi also manufactures “gold doped” limiters for fastest
turn on time. In addition, we manufacture high voltage dual junction
limiters for superior peak and CW power handling.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC.
www.MICROSEMI.com
Low Loss
Suitable for applications to
18Ghz
Excellent flat leakage
performance
Low 1 dB compression point
Gold Doped Diodes for Fast Turn
On
APPLICATIONS
A diode limiter is a power-sensitive variable attenuator that uses the non-linear
properties of the diode to provide an impedance mismatch when sufficient amounts
of RF power are incident on the device. The output power is reduced to a level that
will not overdrive a receiver, burn out a mixer, etc. For varying input power levels in
excess of the diode’s threshold level, the limiter’s output power tends to remain
constant.
A passive limiter is one in which the limiter diodes are “turned on” by the RF signal
itself. An active limiter is one in which the limiter diodes are “turned on” primarily by
an external bias current typically supplied by a Schottky detector diode which
senses the incident signal.
Since limiter diodes are not designed to dissipate large amounts of power, the
limiter must reflect or divert the excess incident power back to the source or to
another load (i.e. via a circulator, hybrid coupler, etc.).
Limiter diodes may be used in wave guides, coax, microstrip, stripline or other
media. Single or cascaded devices may be used, depending on power levels.
RoHS Compliant
1
Most or our devices are supplied with
Gold plated terminations. Other
terminal finishes are available on
request. Consult factory for details.
1
APPLICATIONS/BENEFITS
Receiver protection circuits
Amplifier Protection
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Maximum Leakage Current
@80% of minimum Rated Vb
Operating Temperature
Symbol
Ir
T op
Value
0.5
-55 to +150
Unit
uA
ºC
GC4701 - GC4750
Storage Temperature
T stg
-65 to +150
ºC
IMPORTANT:
For the most current data, consult our website
:
www.MICROSEMI.com
HU
U
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GC4701 - GC4750
TM
®
CONTROL DEVICES – LIMITER DIODES
RoHS Compliant
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
V
b
C
j0
C
j-6
C
j-50
R
s
T
L
Model #
(Min)
(Typ)
(Max)
(Max)
(Typ)
(Typ
)
I
R
=10μA
(Volts)
GC4701-00
GC4702-00
GC4711-00
GC4712-00
GC4713-00
GC4721-00
GC4722-00
GC4723-00
GC4731-00
GC4732-00
GC4741-00
GC4742-00
GC4750-002
(3)
P
1
P
2
(Typ)
THERMAL
RESISTANCE
(Max)
THERMAL
RESISTANCE
www.MICROSEMI.com
@0V
(pF)
0.20
0.50
0.20
0.50
0.70
0.20
0.60
0.80
0.12
0.20
0.12
0.20
--
@-6V
(pF)
0.15
0.30
0.15
0.30
0.50
0.15
0.30
0.50
0.10
0.15
0.10
0.15
--
@-50V
(pF)
--
--
--
--
--
--
--
--
--
--
--
--
0.25
(4)
@10 mA
(Ω)
1.5
1.2
1.5
1.2
1.0
1.5
1.0
0.5
2.0
1.5
2.0
1.5
3.0@50mA
(ns)
5
10
10
15
20
50
50
100
5
5
7
7
300
(˚C/W)
20
12
15
10
6
1.2
0.5
0.3
30
20
20
15
4
(˚C/W)
100
80
80
60
40
40
20
15
120
80
100
70
10
20
20
45
45
45
120
120
120
15
15
30
30
250
TYPICAL RF PERFORMANCE @ 25C (unless otherwise specified)
Model
Number
GC4701
GC4702
GC4711
GC4712
GC4713
GC4721
GC4722
GC4723
GC4731
GC4732
GC4741
GC4742
GC4750
V
b
(Min)
20
20
45
45
45
120
120
120
15
15
30
30
250
PEAK POWER
P
IN
@ 1
S
(dBm)
+50
+53
+53
+56
+59
+60
+63
+66
+47
+50
+47
+50
+56 @10uS
TYPICAL
LEAKAGE
(dBm)
+22
+24
+27
+29
+31
+39
+41
+44
+19
+22
+24
+27
+44
TYPICAL
THRESHOLD
(dBm)
+10
+10
+15
+15
+15
+20
+20
+20
+7
+4
+12
+12
+31
TYPICAL
INS. LOSS
MAXIMUM
CW POWER
P
out
I
L
(dB)
0.1
0.2
0.1
0.2
0.2
0.1
0.2
0.2
0.1
0.1
0.1
0.1
0.2
(Watts)
2
3
3
4
5
5
10
15
2
3
3
4
50
ELECTRICALS
Notes
1) Pulse length 1 microsecond.
2) As measured in style 30 package
3) Available in 002 style or 115-2 package styles
4) C
J
for 2 junctions in parallel @ V
R
=50V
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
GC4701 - GC4750
TM
®
CONTROL DEVICES – LIMITER DIODES
RoHS Compliant
POWER LEAKAGE PERFORMANCE
+50
15 Micron
4 Micron
2 Micron
Power Out (mw)
0 dB
10 dB
20 dB
TRANSFER CHARACTERISTICS
www.MICROSEMI.com
Pout
+40
30 dB
1 dB
Compression
Point
Low Level
Ins. Loss
+30
+20
+10
+0
+0
+10
+20
+30
+40
+50
+60
+70
Linear Region
Compression
Hard Limiting
Burnout
Peak Input Power (dBm)
Pin
Typical Power Leakage vs I Region Thickness
SERIES RESISTANCE
Typical R
S
Vs I
F
Curve
1000
Typical Limiter Transfer Characteristics
HIGH POWER DUAL LIMITER DESIGN
SCHOTTKY
DRIVER (GC9700)
GC4750
100
DC BLOCK
DC BLOCK
R
S
(Ω)
10
RF IN
50
Ω
GC4750
GC4712
RF OUT
50
Ω
1
λ
/4
Spacing
0.01
0.1
1
10
100
0.1
0.001
2 Stage Limiter with Schottky Driver
I
F
(mA)
GRAPHS
GRAPHS
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
Microcontroller MCU
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