Features
•
Low Voltage and Standard Voltage Operation
– 5.0 (V
CC
= 4.5V to 5.5V)
– 2.7 (V
CC
= 2.7V to 5.5V)
– 2.5 (V
CC
= 2.5V to 5.5V)
User Selectable Internal Organization
– 1K: 128 x 8 or 64 x 16
– 2K: 256 x 8 or 128 x 16
– 4K: 512 x 8 or 256 x 16
4-Wire Serial Interface
Self-Timed Write Cycle (10 ms max)
High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
– ESD Protection: >4000V
8-Pin PDIP and 8-Pin EIAJ SOIC Packages
•
•
•
•
4-Wire Serial
EEPROMs
1K (128 x 8 or 64 x 16)
2K (256 x 8 or 128 x 16)
4K (512 x 8 or 256 x 16)
•
Description
The AT59C11/22/13 provides 1024/2048/4096 bits of serial EEPROM (Electrically
Erasable Programmable Read Only Memory) organized as 64/128/256 words of 16
bits each, when the ORG Pin is connected to V
CC
and 128/256/512 words of 8 bits
each when it is tied to ground. The device is optimized for use in many industrial and
commercial applications where low power and low voltage operation are essential.
The AT59C11/22/13 is available in space saving 8-pin PDIP and 8-pin EIAJ SOIC
packages.
The AT59C11/22/13 is enabled through the Chip Select pin (CS), and accessed via a
4-wire serial interface consisting of Data Input (DI), Data Output (DO), and Clock
(CLK). Upon receiving a READ instruction at DI, the address is decoded and the data
is clocked out serially on the data output pin DO, the WRITE cycle is completely self-
timed and no separate ERASE cycle is required before WRITE. The WRITE cycle is
only enabled when the part is in the ERASE/WRITE ENABLE state. Ready/Busy sta-
tus can be monitored upon completion of a programming operation by polling the
Ready/Busy pin.
The AT59C11/22/13 is available in 5.0V
±
10%, 2.7V to 5.5V and 2.5V to 5.5V ver-
sions.
AT59C11
AT59C22
AT59C13
Pin Configurations
Pin Name
CS
CLK
DI
DO
GND
V
CC
ORG
RDY/BUSY
Function
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
Power Supply
Internal Organization
Status Output
8-Pin SOIC
8-Pin PDIP
4-Wire, 1K
Serial E
2
PROM
Rev. 0173K–07/98
1
Absolute Maximum Ratings*
Operating Temperature .................................. -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
Voltage on Any Pin
with Respect to Ground .....................................-1.0V to +7.0V
Maximum Operating Voltage........................................... 6.25V
DC Output Current........................................................ 5.0 mA
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Block Diagram
(1)
Note:
1.
When the ORG pin is connected to V
CC
, the x 16 organization is selected. When it is connected to ground, the x 8 organiza-
tion is selected. If the ORG pin is left unconnected, then an internal pullup device will select the x 16 organization.
2
AT59C11/22/13
AT59C11/22/13
Pin Capacitance
(1)
Applicable over recommended operating range from T
A
= 25°C, f = 1.0 MHz, V
CC
= +5.0V (unless otherwise noted).
Test Conditions
C
OUT
C
IN
Note:
Output Capacitance (DO)
Input Capacitance (CS, CLK, DI, RDY/BUSY)
1. This parameter is characterized and is not 100% tested.
Max
5
5
Units
pF
pF
Conditions
V
OUT
= 0V
V
IN
= 0V
DC Characteristics
Applicable over recommended operating range from: T
AI
= -40°C to +85°C, V
CC
= +2.5V to +5.5V,
T
AC
= 0°C to +70°C, V
CC
= +2.5V to +5.5V (unless otherwise noted).
Symbol
V
CC1
V
CC2
V
CC3
V
CC4
I
CC
Parameter
Supply Voltage
Supply Voltage
Supply Voltage
Supply Voltage
Supply Current
V
CC
= 5.0V
READ at 1.0 MHz
WRITE at 1.0 MHz
I
SB1
I
SB2
I
SB3
I
IL
I
OL
V
IL1(1)
V
IH1(1)
V
IL2(1)
V
IH2(1)
V
OL1
V
OH1
V
OL2
V
OH2
Note:
Standby Current
Standby Current
Standby Current
Input Leakage
Output Leakage
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
V
CC
= 2.5V
V
CC
= 2.7V
V
CC
= 5.0V
V
IN
= 0V to V
CC
V
IN
= 0V to V
CC
4.5V
≤
V
CC
≤
5.5V
2.5V
≤
V
CC
≤
2.7V
4.5V
≤
V
CC
≤
5.5V
2.5V
≤
V
CC
≤
2.7V
I
OL
= 2.1 mA
I
OH
= 0.4 mA
I
OL
= 0.15 mA
I
OH
= -0.1 mA
-0.6
2.0
-0.6
V
CC
x 0.7
2.4
0.2
V
CC
- 0.2
V
CS = 0V
CS = 0V
CS = 0V
Test Condition
Min
1.8
2.5
2.7
4.5
0.5
0.5
6.0
6.0
21.0
0.1
0.1
Typ
Max
5.5
5.5
5.5
5.5
2.0
2.0
10.0
10.0
30.0
1.0
1.0
0.8
V
CC
+ 1
V
CC
x 0.3
V
CC
+ 1
0.4
Units
V
V
V
V
mA
mA
µA
µA
µA
µA
µA
V
V
V
1. V
IL
min and V
IH
max are reference only and are not tested.
3
AC Characteristics
Applicable over recommended operating range from T
A
= -40°C to +85°C, V
CC
= +2.5V to +5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol
Parameter
Test Condition
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
Min
0
0
0
0
250
250
500
1000
250
250
500
1000
250
250
500
1000
50
50
100
200
100
100
200
400
0
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
4.5V
≤
V
CC
2.7V
≤
V
CC
2.5V
≤
V
CC
1.8V
≤
V
CC
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
≤
5.5V
0.1
1M
100
100
200
400
250
250
500
1000
250
250
500
1000
250
250
500
1000
100
100
200
400
10
Typ
Max
1
1
0.5
0.25
Units
f
CLK
CLK Clock Frequency
MHz
t
CKH
CLK High Time
ns
t
CKL
CLK Low Time
ns
t
CS
Minimum CS Low Time
ns
t
CSS
CS Setup Time
Relative to SK
ns
t
DIS
DI Setup Time
Relative to SK
ns
t
CSH
CS Hold Time
Relative to SK
ns
t
DIH
DI Hold Time
Relative to SK
ns
t
PD1
Output Delay to ‘1’
AC Test
ns
t
PD0
Output Delay to ‘0’
AC Test
ns
t
RBD
RDY/BUSY Delay to
Status Valid
AC Test
ns
t
CZ
CS to DO in High
Impedance
Write Cycle Time
5.0V, 25°C, Page Mode
AC Test
CS = V
IL
ns
t
WC
Endurance
(1)
ms
Write Cycles
Note:
1. This paramter is characterized and is not 100% tested.
4
AT59C11/22/13
AT59C11/22/13
Instruction Set for the AT59C11
Instruction
READ
EWEN
WRITE
ERAL
WRAL
EWDS
SB
1
1
1
1
1
1
Op
Code
10XX
0011
X1XX
0010
0001
0000
Address
x8
A
6
- A
0
XXXXXXX
A
6
- A
0
XXXXXXX
XXXXXXX
XXXXXXX
x 16
A
5
- A
0
XXXXXX
A
5
- A
0
XXXXXX
XXXXXX
XXXXXX
D
7
- D
0
D
15
- D
0
D
7
- D
0
D
15
- D
0
x8
Data
x 16
Comments
Reads data stored in memory, at
specified address.
Write enable must precede all
programming modes.
Writes memory location A
n
- A
0
.
Erases all memory locations. Valid only
at V
CC
= 4.5V to 5.5V.
Writes all memory locations. Valid only
at V
CC
= 4.5V to 5.5V.
Disables all programming
instructions.
Instruction Set for the AT59C22
Instruction
READ
EWEN
WRITE
ERAL
WRAL
SB
1
1
1
1
1
Op
Code
10XX
0011
X1XX
0010
0001
Address
x8
A
7
- A
0
XXXXXXXX
A
7
- A
0
XXXXXXXX
XXXXXXXX
x 16
A
6
- A
0
XXXXXXX
A
6
- A
0
XXXXXXX
XXXXXXX
D
7
- D
0
D
15
- D
0
D
7
- D
0
D
15
- D
0
x8
Data
x 16
Comments
Reads data stored in memory, at
specified address.
Write enable must precede all
programming modes.
Writes memory location A
n
- A
0
.
Erases all memory locations. Valid only
at V
CC
= 4.5V to 5.5V.
Writes all memory locations. Valid when
V
CC
= 5.0V
±
10% and Disable Register
cleared.
Disables all programming instructions.
EWDS
1
0000
XXXXXXXX
XXXXXXX
5
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