AT59C13W-10SC-2.7 datasheet, PDF

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AT59C13W-10SC-2.7: Description4-Wire Serial EEPROMs; Categorystorage storage; File Size91KB，13 Pages; ManufacturerAtmel (Microchip)

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AT59C13W-10SC-2.7 Overview

4-Wire Serial EEPROMs

AT59C13W-10SC-2.7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Atmel (Microchip)
Parts packaging code	SOIC
package instruction	SOP, SOP8,.3
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	4-WIRE SERIAL INTERFACE
Spare memory width	8
Maximum clock frequency (fCLK)	1 MHz
Data retention time - minimum	100
Durability	1000000 Write/Erase Cycles
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
length	5.31 mm
memory density	4096 bi
Memory IC Type	EEPROM
memory width	16
Humidity sensitivity level	1
Number of functions	1
Number of terminals	8
word count	256 words
character code	256
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256X16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP8,.3
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	240
power supply	3/5 V
Certification status	Not Qualified
Maximum seat height	2.03 mm
Serial bus type	4-WIRE
Maximum standby current	0.00001 A
Maximum slew rate	0.002 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	5.27 mm
Maximum write cycle time (tWC)	10 ms
write protect	SOFTWARE

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Features

•

Low Voltage and Standard Voltage Operation

– 5.0 (V

= 4.5V to 5.5V)

– 2.7 (V

= 2.7V to 5.5V)

– 2.5 (V

= 2.5V to 5.5V)

User Selectable Internal Organization

– 1K: 128 x 8 or 64 x 16

– 2K: 256 x 8 or 128 x 16

– 4K: 512 x 8 or 256 x 16

4-Wire Serial Interface

Self-Timed Write Cycle (10 ms max)

High Reliability

– Endurance: 1 Million Write Cycles

– Data Retention: 100 Years

– ESD Protection: >4000V

8-Pin PDIP and 8-Pin EIAJ SOIC Packages

•

4-Wire Serial

EEPROMs

1K (128 x 8 or 64 x 16)

2K (256 x 8 or 128 x 16)

4K (512 x 8 or 256 x 16)

•

Description

The AT59C11/22/13 provides 1024/2048/4096 bits of serial EEPROM (Electrically

Erasable Programmable Read Only Memory) organized as 64/128/256 words of 16

bits each, when the ORG Pin is connected to V

and 128/256/512 words of 8 bits

each when it is tied to ground. The device is optimized for use in many industrial and

commercial applications where low power and low voltage operation are essential.

The AT59C11/22/13 is available in space saving 8-pin PDIP and 8-pin EIAJ SOIC

packages.

The AT59C11/22/13 is enabled through the Chip Select pin (CS), and accessed via a

4-wire serial interface consisting of Data Input (DI), Data Output (DO), and Clock

(CLK). Upon receiving a READ instruction at DI, the address is decoded and the data

is clocked out serially on the data output pin DO, the WRITE cycle is completely self-

timed and no separate ERASE cycle is required before WRITE. The WRITE cycle is

only enabled when the part is in the ERASE/WRITE ENABLE state. Ready/Busy sta-

tus can be monitored upon completion of a programming operation by polling the

Ready/Busy pin.

The AT59C11/22/13 is available in 5.0V

10%, 2.7V to 5.5V and 2.5V to 5.5V ver-

sions.

AT59C11

AT59C22

AT59C13

Pin Configurations

Pin Name

CLK

GND

ORG

RDY/BUSY

Function

Chip Select

Serial Data Clock

Serial Data Input

Serial Data Output

Ground

Power Supply

Internal Organization

Status Output

8-Pin SOIC

8-Pin PDIP

4-Wire, 1K

Serial E

PROM

Rev. 0173K–07/98

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