MT8JSF12864HY-1G1XX datasheet, PDF

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MT8JSF12864HY-1G1XX: DescriptionDDR DRAM Module, 128MX64, CMOS, LEAD FREE, MO-268, SODIMM-204; Categorystorage storage; File Size399KB，22 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT8JSF12864HY-1G1XX Overview

DDR DRAM Module, 128MX64, CMOS, LEAD FREE, MO-268, SODIMM-204

MT8JSF12864HY-1G1XX Parametric

Parameter Name	Attribute value
Maker	Micron Technology
Parts packaging code	SODIMM
package instruction	DIMM,
Contacts	204
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XZMA-N204
memory density	8589934592 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	204
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	1.575 V
Minimum supply voltage (Vsup)	1.425 V
Nominal supply voltage (Vsup)	1.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	ZIG-ZAG

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1GB, 2GB (x64, SR) 204-Pin DDR3 SDRAM SODIMM

Features

DDR3 SDRAM SODIMM

MT8JSF12864H – 1GB

MT8JSF25664H – 2GB

Features

•

DDR3 functionality and operations supported as de-

fined in the component data sheet

•

204-pin, small-outline dual in-line memory module

(SODIMM)

•

Fast data transfer rates: PC3-12800, PC3-10600,

PC3-8500, or PC3-6400

•

1GB (128 Meg x 64) and 2GB (256 Meg x 64)

•

Vdd = 1.5V ±0.075V

•

Vddspd = +3.0V to +3.6V

•

Nominal and dynamic on-die termination (ODT) for

data, strobe, and mask signals

•

Single rank

•

On-board I

C temperature sensor with integrated se-

rial presence-detect (SPD) EEPROM

•

8 internal device banks

•

Fixed burst chop (BC) of 4 and burst length (BL) of 8

via the mode register set (MRS)

•

Selectable BC4 or BL8 on-the-fly (OTF)

•

Gold edge contacts

•

Lead-free

•

Fly-by topology

•

Terminated control, command, and address bus

Table 1: Key Timing Parameters

Speed

Grade

-1G6

-1G4

-1G1

-1G0

-80C

-80B

Industry

Nomenclature

PC3-12800

PC3-10600

PC3-8500

PC3-6400

Data Rate (MT/s)

CL = 11 CL = 10

1600

–

1333

–

CL = 9

1333

–

CL = 8

1066

–

CL = 7

1066

–

CL = 6

800

CL = 5

667

800

667

RCD

Figure 1: 204-Pin SODIMM (MO-268 R/C B)

Module height: 30.0mm (1.18in)

Options

•

Operating temperature

–

Commercial (0°C

≤

+70°C)

–

Industrial (–40°C

≤

+85°C)

•

Package

–

204-pin lead-free DIMM

•

Frequency/CAS latency

–

1.25ns @ CL = 11 (DDR3-1600)

–

1.5ns @ CL = 9 (DDR3-1333)

–

1.87ns @ CL = 7 (DDR3-1066)

Notes:

Marking

None

-1G6

-1G4

-1G1

1. Contact Micron for industrial temperature

module offerings.

2. Not recommended for new designs.

(ns)

13.125

12.5

(ns)

13.125

12.5

(ns)

48.125

49.125

50.625

52.5

PDF: 09005aef82b36df5

Rev. C 8/09 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

MT8JSF12864HY-1G1XX Related Products

	MT8JSF12864HY-1G1XX	MT8JSF12864HY-1G1B1	MT8JSF12864HIY-1G4XX	MT8JSF12864HIY-1G1XX	MT8JSF25664HIY-1G4XX	MT8JSF25664HIY-1G1XX	MT8JSF25664HIY-1G6XX	MT8JSF12864HIY-1G6XX
Description	DDR DRAM Module, 128MX64, CMOS, LEAD FREE, MO-268, SODIMM-204	DDR DRAM Module, 128MX64, CMOS, LEAD FREE, MO-268, SODIMM-204	DDR DRAM Module, 128MX64, CMOS, LEAD FREE, MO-268, SODIMM-204	DDR DRAM Module, 128MX64, CMOS, LEAD FREE, MO-268, SODIMM-204	DDR DRAM Module, 256MX64, CMOS, LEAD FREE, MO-268, SODIMM-204	DDR DRAM Module, 256MX64, CMOS, LEAD FREE, MO-268, SODIMM-204	DDR DRAM Module, 256MX64, CMOS, LEAD FREE, MO-268, SODIMM-204	DDR DRAM Module, 128MX64, CMOS, LEAD FREE, MO-268, SODIMM-204
Parts packaging code	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM
package instruction	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,
Contacts	204	204	204	204	204	204	204	204
Reach Compliance Code	unknow	unknown	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XZMA-N204	R-XZMA-N204	R-XZMA-N204	R-XZMA-N204	R-XZMA-N204	R-XZMA-N204	R-XZMA-N204	R-XZMA-N204
memory density	8589934592 bi	8589934592 bit	8589934592 bit	8589934592 bit	17179869184 bit	17179869184 bit	17179869184 bit	8589934592 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	204	204	204	204	204	204	204	204
word count	134217728 words	134217728 words	134217728 words	134217728 words	268435456 words	268435456 words	268435456 words	134217728 words
character code	128000000	128000000	128000000	128000000	256000000	256000000	256000000	128000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	128MX64	128MX64	128MX64	128MX64	256MX64	256MX64	256MX64	128MX64
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	1.575 V	1.575 V	1.575 V	1.575 V	1.575 V	1.575 V	1.575 V	1.575 V
Minimum supply voltage (Vsup)	1.425 V	1.425 V	1.425 V	1.425 V	1.425 V	1.425 V	1.425 V	1.425 V
Nominal supply voltage (Vsup)	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG
Maker	Micron Technology	Micron Technology	Micron Technology	-	Micron Technology	Micron Technology	Micron Technology	Micron Technology
Is it lead-free?	-	-	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	-	-	conform to	conform to	conform to	conform to	conform to	conform to
JESD-609 code	-	-	e4	e4	e4	e4	e4	e4
Peak Reflow Temperature (Celsius)	-	-	260	260	260	260	260	260
Terminal surface	-	-	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)
Maximum time at peak reflow temperature	-	-	30	30	30	30	30	30

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