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80EBU02

Description
80 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size115KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

80EBU02 Overview

80 A, SILICON, RECTIFIER DIODE

80EBU02 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionPOWERTAB-1
Contacts1
Reach Compliance Codecompli
applicationUFSRHP
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.92 V
JESD-30 codeR-PSFM-X1
Maximum non-repetitive peak forward current800 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current80 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formUNSPECIFIED
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
80EBU02
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED Pt
TM
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Screw mounting only
• Lead (Pb)-free plating
Cathode
Anode
RoHS
COMPLIANT
• Designed and qualified for industrial level
BENEFITS
PowerTab
TM
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
35 ns
80 A
200 V
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and
storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 112 °C
T
C
= 25 °C
Square wave, 20 kHz
TEST CONDITIONS
MAX.
200
80
800
160
- 55 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
r
V
F
I
R
= 50 µA
I
F
= 80 A
I
F
= 80 A, T
J
= 175 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
TYP.
-
0.98
0.79
-
-
89
3.5
MAX.
-
1.13
0.92
50
2
-
-
µA
mA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
Document Number: 93024
Revision: 30-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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