80PF(R)...(W) High Voltage Series
Vishay High Power Products
Standard Recovery Diodes
Generation 2 DO-5 (Stud Version), 80 A
FEATURES
80PF(R)...
80PF(R)...W
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Compliant to RoHS directive 2002/95/EC
DO-203AB (DO-5)
DO-203AB (DO-5)
• Designed and qualified for multiple level
TYPICAL APPLICATIONS
• Converters
PRODUCT SUMMARY
I
F(AV)
80 A
• Power supplies
• Machine tool controls
• Welding
• Any high voltage input rectification bridge
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
VALUES
80
T
C
123
126
1200
1250
7100
6450
1400 to 1600
- 55 to 150
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
80PF(R)...(W)
VOLTAGE
CODE
140
160
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1650
1900
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
4.5
Document Number: 93527
Revision: 20-May-09
For technical questions, contact:
ind-modules@vishay.com
www.vishay.com
1
80PF(R)...(W) High Voltage Series
Vishay High Power Products
Standard Recovery Diodes
Generation 2 DO-5 (Stud Version), 80 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
Low level value of forward slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)
r
f
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
VALUES
80
123
126
1200
1250
1000
Sinusoidal half wave,
initial T
J
= 150 °C
1050
7100
6450
5000
4550
71 000
0.73
3.0
1.46
A
2
√s
V
mΩ
V
A
2
s
A
UNITS
A
°C
A
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 220 A, T
J
= 25 °C, t
p
= 400 µs rectangular wave
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
(1)
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
Lubricated thread, tighting on nut
(1)
Not lubricated thread, tighting on hexagon
(2)
Lubricated thread, tighting on hexagon
(2)
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
- 55 to 150
0.30
K/W
0.25
3.4
(30)
2.3
(20)
4.2
(37)
3.2
(28)
15.8
0.56
DO-203AB (DO-5)
g
oz.
N·m
(lbf · in)
UNITS
°C
Notes
(1)
Recommended for pass-through holes
(2)
Torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink
www.vishay.com
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For technical questions, contact:
ind-modules@vishay.com
Document Number: 93527
Revision: 20-May-09
80PF(R)...(W) High Voltage Series
Standard Recovery Diodes
Vishay High Power Products
Generation 2 DO-5 (Stud Version), 80 A
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.14
0.16
0.21
0.30
0.50
RECTANGULAR CONDUCTION
0.10
0.17
0.22
0.31
0.50
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Peak Half Sine Wave Forward Current (A)
160
Maximum Allowable Case Temperature (°C)
1200
1100
1000
900
800
700
600
500
400
300
200
0.01
150
80PF(R) Series
140 to 160
RthJC = 0.3 K/W
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= T
J
Max.
No Voltage Reapplied
Rated V
RRM
Reapplied
140
180° Sine
130
120
80PF(R) Series
70HF(R) Series
140 to 160
0.1
Pulse Train Duration (s)
1
110
0
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
1100
1000
900
800
700
600
500
400
300
1
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= T
J
Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
Tj = 25°C
100
Tj = Tj Max
10
80PF(R) Series
70HF(R) Series
140 to 160
10
100
70HF(R) Series
80PF(R) Series
(140 to 160)
140 to 160
1
0
0.5 1 1.5 2 2.5 3 3.5
Instantaneous Forward Voltage (V)
4
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Maximum Non-Repetitive Surge Current
Fig. 4 - Forward Voltage Drop Characteristics
Document Number: 93527
Revision: 20-May-09
For technical questions, contact:
ind-modules@vishay.com
www.vishay.com
3
80PF(R)...(W) High Voltage Series
Vishay High Power Products
Standard Recovery Diodes
Generation 2 DO-5 (Stud Version), 80 A
1
Steady State Value
RthJC = 0.3 K/W
(DC Operation)
Transient Thermal Impedance Z
thJC
(K/W)
0.1
80PF(R) Series
80PF(R) Series
140 to 160
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 5 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
80
1
1
2
3
4
5
PF
2
-
-
-
-
-
R
3
160
4
W
5
80 = Standard device
PF = Plastic package
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = Standard terminal
(see dimensions for 80PF(R)... - link at the end of datasheet)
W = Wire terminal
(see dimensions for 80PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95345
www.vishay.com
4
For technical questions, contact:
ind-modules@vishay.com
Document Number: 93527
Revision: 20-May-09
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for 50PF(R)...(W),
80PF(R)...(W) and 95PF(R)...(W) Series
DIMENSIONS FOR 80PF(R), 50PF(R) AND 95PF(R) SERIES
in millimeters
6.45 MIN.
Ø3
4.2 MAX.
1.2 MAX.
3.5 MIN.
4 MIN.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"28-UNF-2A
For metric devices: M6 x 1
17.25 MAX.
Ø 15.6 MAX.
Ø 16.8 MAX.
18.9
+ 0.1
0.0
Note
• For metric device please contact factory
Document Number: 95345
Revision: 26-Aug-08
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1