SEMICONDUCTOR
85FD(R)Series
Fast Recovery Diodes
(Stud Version), 85A
RoHS
RoHS
Nell High Power Products
Available
RoHS*
COMPLIANT
FEATURES
Short reverse recovery time
Low stored charge
Wide current range
Excellent surge capabilities
Stud cathode and stud anode versions
Voltage up to 1200 V
RRM
Compliant to RoHS directive 2002/95/EC
TYPICAL APPLICATIONS
DC power supplies
lnverters
Converters
Choppers
Ultrasonic systems
Freewheeling diodes
DO-203AB(DO-5)
PRODUCT SUMMARY
I
F(AV)
85A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FSM
I
2
t
CHARACTERISTICS
85FD(R)
85
UNIT
A
ºC
Maximum T
C
85
1308
1369
8554
7778
85543
50 HZ
60 HZ
50 HZ
60 HZ
A
A
2
s
I
2
√t
V
RRM
t
rr
T
J
Range
Range
I
2
√s
V
ns
ºC
200 to 1200
See Recovery Characteristics table
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
PEAK REPETITIVE
REVERSE VOLTAGE
T
J
= -40°C TO 125°C
V
V
RSM
, MAXIMUM PEAK
NON-REPETITIVE
REVERSE VOLTAGE
T
J
= 25°C TO 125°C
V
I
FM
, MAXIMUM PEAK REVERSE
CURRENT AT RATED V
RRM
mA
T
J
= 25°C
T
J
= 125°C
02
04
06
85FD(R)
08
10
12
200
400
600
800
1000
1200
300
500
700
900
1100
1300
0.1
20
www.nellsemi.com
Page 1 of 6
SEMICONDUCTOR
RoHS
85FD(R)Series
RoHS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
I
F(AV)
I
F(RMS)
I
FRM
TEST CONDITIONS
180° conduction, half sine wave
85FD(R)
85
85
133
UNIT
A
ºC
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
Maximum peak, one-cycle
non-reptitive surge current
A
A
Sinusoidal half wave, 30°
conduction
t
= 10ms
t
= 8.3ms
t
= 10ms
t
=
8.3ms
t
= 10ms
t
= 8.3ms
Sinusoidal half wave, 100% V
RRM
reapplied, initial T
J
=T
J
maximum
Sinusoidal half wave, no voltage
reapplied, initial T
J
=T
J
maximum
100% V
RRM
reapplied,
initial T
J
=T
J
maximum
no voltage reapplied,
initial T
J
=T
J
maximum
470
1100
1151
1308
1369
6050
5498
8554
7778
85543
1.128
2.11
I
FSM
A
Maximum l²t for fusing
I
2
t
t
= 10ms
t
= 8.3ms
A
2
s
Maximum l²√t for fusing
(1)
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
Note :
(1)
l
2
t for time t
x
=1
2
√
t
√t
x
I
2
√t
V
F(TO)
r
F
t = 0.1 ms to 10 ms, no voltage reapplied
A
2
√
s
T
J
= 125°C
T
J
= 25°C; l
FM
= 265A
V
mΩ
V
V
FM
1.75
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25°C, I
F
= 1A, I
R
= 1.0A,
I
RR
= 250mA (RG#1 CKT)
Typical reverse recovery time
t
rr
T
J
= 25°C, I
F
= 1A to V
R
= 30V ,
-dl
F
/dt = 100 A/µs
T
J
= 25°C, -dl
F
/dt = 25 A/µs,
l
FM
=
π
x rated l
F(AV)
T
J
= 25°C, I
F
= 1A to V
R
= 30V,
-dl
F
/dt = 100 A/µs
T
J
= 25°C, -dl
F
/dt = 25 A/µs,
l
FM
=
π
x rated l
F(AV)
85FD(R)
02 to 06
200
08 to 12
500
UNIT
50
120
ns
200
70
500
340
Typical reverse recovered charge
Q
rr
nC
240
1300
www.nellsemi.com
Page 2 of 6
SEMICONDUCTOR
RoHS
85FD(R)Series
RoHS
Nell High Power Products
THERMAL AND MECHANICAL SPECIFCATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
T
stg
R
thJC
R
thCS
TEST CONDITIONS
85FD(R)
-40 to125
UNITS
ºC
- 40 to150
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads, tighting on nut
(1)
0.30
K/W
0.25
3.4(30)
2.3(20)
4.2(37)
N
·
m
(lbf
·
in)
Maximum allowable mounting torque
(+0%, -10%)
Lubricated thread, tighting on nut
(1)
Not lubricated threads, tighting on hexagon
(2)
(2)
Lubricated thread, tighting on
hexagon
Approximate weight
Case style
Note :
(1) Recommended for pass-through holes
(2) Recommended for holed threaded heatsinks
JEDEC
3.2(28)
g
25
oz.
0.88
DO-203AB (DO-5)
R
thJC
CONDUCTION
CONDUCTION ANGEL
180˚
120˚
60˚
30˚
Note
85FD(R)
SINUSOIDAL CONDUCTION
0.37
0.39
0.82
1.41
TEST CONDUCTIONS
0.21
0.37
0.82
1.41
T
J
= 150°C
UNITS
RECTANGULAR CONDUCTION
K/W
• The table above shows the increment of thermal resistance R
thJC
when devices
operate at different conduction angles than DC
ORDERING INFORMATION SCHEME
85 FD R
Current
85 = 85A
06
A
Diode type
FD = Fast Recovery Diode
Polarity
R = Reverse, Anode on Stud
None = standard, Cathode on Stud
Voltage
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
Trr value
A
= 200
ns Max.
B
= 500
ns Max.
www.nellsemi.com
Page 3 of 6
SEMICONDUCTOR
RoHS
85FD(R)Series
RoHS
N
ell
High Power Products
Fig.1 Current rating nomogram (Sinusoidal Waveforms)
Maximum average forward power loss (W)
25
A=
20
15
ø =180°
120°
60°
30°
4-
6 -
▲
8-
▲
1 0 -
▲
R
5-
▲
R
R
RMS Limit
R
180°
0.37
10
1 5 -
▲
R
2 0 -
▲
R
Conduction Angle
120°
0.39
5
0
0
2
4
6
8
10
12
14
60°
0.82
30°
1.41
16 10 20 30 40 50 60 70 80
90
100
Maximum allowable ambient temperature (°C)
Average forward current (A)
Fig.2 Current rating nomogram (Rectangular waveforms)
Maximum average forward power loss (W)
35
.0
1.
-
▲
R
0 -
5 -
▲
▲
R
R
1
K/W
0.21
0.37
0.82
1.41
30
25
20
15
2.
ø =180°
120°
60°
30°
R
DC
th
=
3
4-
▲
R
6-
▲
R
8 -
▲
R
1 0 -
▲
R
ø
5-
▲
R
.0
-
▲
R
K/
W
DC
180°
120°
60°
30°
0
RMS Limit
10
5
0
0
5
10
15
20
15 -
▲
R
Conduction Angle
25
10 20 30 40 50 60 70 80 90 100
Maximum allowable ambient temperature (°C)
Average forward current (A)
Fig .3 Maximum high level forward power
loss vs. average forward current
Maximum average forward power loss (W)
10
4
85FD(R)Series
T
J
= 125°C
ø =180°
120°
60°
30°
Fig. 4 Maximum forward voltage vs. forward
current.
10
3
85FD(R)Series
10
3
ø =DC
180°
120°
60°
30°
Instantaneous forward current (A)
10
2
T
J
= 125°C
10
2
10
T
J
= 25°C
10
10
10
2
10
3
10
4
1
0
1
2
3
4
Instantaneous forward voltage (V)
Average forward current (A)
www.nellsemi.com
Page 4 of 6
▲
R
SA
Conduction angle
ø
85FD(R)Series
T
J
= 150°C
▲
R
▲
R
3.
0-
▲
R
2.
K/
0-
▲
R
W
K/W
R
th
S
Conduction angle
ø
85FD(R)Series
T
J
= 150°C
1.
▲
R
0-
1.
▲
R
5-
0.
5-
▲
R
SEMICONDUCTOR
RoHS
85FD(R)Series
RoHS
N
ell
High Power Products
Fig.5 Average forward current vs. maximum
allowable case temperature.
Maximum allowable case temperature (˚C)
125
85FD(R)Series
Fig .6 Typical reverse recovery time vs.
rate of fall of forward current.
10
4
85FD(R), 200 to 600V
110
100
90
80
70
60
50
40
0
ø =180°
120°
90°
60°
30°
ø =180°
120°
60°
30°
Reverse recovery time (ns)
400
T
J
= 125°C
l
F
= 265A
l
F
= 50A
l
F
= 1A
10
2
T
J
= 25°C
l
F
= 265A
l
F
= 50A
l
F
= 1A
DC
40
10
20
40
60
80
100
120
140
1
Average forward current (A)
4
10
40
100
Rate of fall of forward current (A/µs)
Fig .7 Typical recovered charge vs.
rate of fall of forward current.
10
4
85FD(R), 200 to 600V
Fig .8 Typical reverse recovery time vs.
rate of fall of forward current.
5000
85FD(R), 800 to 1200V
Recovered charge (nC)
10
3
Reverse recovery time (ns)
4000
T
J
= 125°C
l
F
= 265A
l
F
= 50A
l
F
= 1A
l
F
= 265A
l
F
= 50A
l
F
= 1A
10
2
=
12
5°
C
1000
T
J
10
T
J
5
=2
°C
400
300
200
T
J
= 25°C
l
F
= 265A
l
F
= 50A
l
F
= 1A
1
1
4
10
40
100
100
1
4
10
40
100
Rate of fall of forward current (A/µs)
Rate of fall of forward current (A/µs)
Fig .9 Typical recovered charge vs.
rate of fall of forward current.
10
5
85FD(R), 800 to 1200V
Recovered charge (nC)
10
4
l
F
= 265A
l
F
= 50A
l
F
= 1A
10
3
T
J
=1
25
°C
10
2
T
J
=2
5°
C
10
1
4
10
40
100
Rate of fall of forward current (A/µs)
www.nellsemi.com
Page 5 of 6
京公网安备 11010802033920号
EEWORLD
