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MR1130

Description
Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-4,
CategoryDiscrete semiconductor    diode   
File Size42KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MR1130 Overview

Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-4,

MR1130 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionO-MUPM-D1
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature190 °C
Minimum operating temperature-65 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current500 µA
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER

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