2 – 16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26884
Features
• High Output Power:
18.0 dBm Typical P
1 dB
at 12 GHz
• High Gain:
9.0 dB Typical G
SS
at 12 GHz
• Low Cost Plastic Package
• Tape-and-Reel Packaging
Option Available
[1]
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
84 Plastic Package
Description
The ATF-26884 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Electrical Specifications, T
A
= 25°C
Symbol
G
SS
NF
O
G
A
P
1 dB
g
m
I
DSS
V
P
Parameters and Test Conditions
Tuned Small Signal Gain: V
DS
= 5 V, I
DS
= 30 mA
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 10 mA
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 10 mA
Power Output @ 1 dB Gain Compression:
V
DS
= 5 V, I
DS
= 30 mA
Transconductance: V
DS
= 3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
f = 12.0 GHz
f = 12.0 GHz
f = 12.0 GHz
Units
dB
dB
dB
15.0
15
30
-3.5
Min.
7.0
Typ. Max.
9.0
2.2
6.0
18.0
35
50
-1.5
90
-0.5
f = 12.0 GHz dBm
mmho
mA
V
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5-71
5965-8703E
ATF-26884 Absolute Maximum Ratings
Symbol
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
[2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
+
7
-4
-8
I
DSS
275
175
-65 to +150
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 3.3 mW/°C for
T
CASE
> 92.5°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
Thermal Resistance:
Liquid Crystal Measurement:
θ
jc
= 300°C/W; T
CH
= 150°C
1
µm
Spot Size
[4]
Part Number Ordering Information
Part Number
ATF-26884-TR1
ATF-26884-STR
Devices Per Reel
1000
10
Reel Size
7"
strip
ATF-26884 Typical Performance, T
A
= 25°C
25
25
20
MSG
20
MSG
MSG
MAG
GAIN (dB)
GAIN (dB)
15
15
MAG
10
MAG
10
|S
21
|
2
MSG
5
|S
21
|
2
5
0
2.0
4.0
6.0
8.0 10.0 12.0 16.0
0
2.0
4.0
6.0
8.0 10.0 12.0 16.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 3 V, I
DS
= 10 mA.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 5 V, I
DS
= 30 mA.
5-72
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
Ω,
T
A
= 25°C, V
DS
= 3 V, I
DS
= 10 mA
Freq.
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
S
11
Mag.
.96
.91
.86
.79
.73
.67
.62
.57
.53
.52
.49
.52
.56
.60
.65
.68
.69
Ang.
-36
-56
-78
-97
-113
-127
-144
-168
168
147
124
103
80
65
52
40
30
dB
6.9
7.4
7.6
7.2
6.8
6.4
6.4
6.2
5.8
5.2
4.9
4.6
4.0
3.3
2.9
2.3
1.3
S
21
Mag.
2.21
2.35
2.39
2.30
2.20
2.10
2.08
2.03
1.96
1.81
1.76
1.70
1.58
1.46
1.40
1.30
1.16
Ang.
142
123
103
86
71
56
41
23
6
-10
-22
-36
-54
-72
-83
-99
-112
dB
-26.6
-23.0
-20.6
-19.5
-18.9
-18.4
-17.9
-17.5
-17.3
-17.2
-17.1
-16.7
-16.3
-16.3
-16.3
-16.0
-15.9
S
12
Mag.
.047
.071
.093
.106
.114
.120
.128
.134
.136
.138
.140
.146
.153
.153
.153
.158
.159
S
22
Ang.
64
50
36
25
16
9
1
-8
-16
-22
-26
-31
-37
-42
-48
-56
-72
Mag.
.81
.77
.70
.66
.62
.61
.58
.54
.47
.41
.39
.37
.35
.35
.37
.41
.47
Ang.
-25
-38
-50
-61
-70
-78
-88
-101
-116
-133
-143
-154
-171
173
132
101
87
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
Ω,
T
A
= 25°C, V
DS
= 5 V, I
DS
= 30 mA
Freq.
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
S
11
Mag.
.94
.87
.79
.71
.64
.57
.52
.48
.48
.48
.49
.53
.57
.62
.70
.75
.74
Ang.
-41
-65
-89
-109
-126
-142
-162
174
149
130
108
88
69
56
44
33
24
dB
9.2
9.5
9.3
8.7
8.1
7.5
7.2
6.9
6.5
5.9
5.6
5.2
4.7
4.1
3.7
3.0
2.3
S
21
Mag.
2.88
2.97
2.93
2.73
2.54
2.38
2.30
2.21
2.11
1.97
1.91
1.82
1.71
1.60
1.53
1.41
1.30
Ang.
138
118
97
79
64
50
35
18
1
-14
-25
-39
-55
-75
-87
-103
-117
dB
-30.8
-27.3
-25.5
-24.9
-24.4
-24.0
-23.1
-21.9
-20.4
-19.7
-18.1
-16.2
-15.2
-14.8
-13.8
-12.9
-13.6
S
12
Mag.
.029
.043
.053
.057
.060
.063
.070
.080
.095
.104
.125
.155
.173
.182
.205
.226
.210
S
22
Ang.
65
51
40
35
33
31
30
28
24
22
20
18
5
-1
-16
-28
-44
Mag.
.84
.80
.74
.71
.69
.69
.69
.67
.63
.57
.55
.54
.52
.52
.52
.54
.63
Ang.
-23
-34
-44
-53
-60
-67
-76
-87
-100
-114
-122
-132
-146
-165
165
135
114
A model for this device is available in the DEVICE MODELS section.
5-73
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