1.5 – 18 GHz Surface Mount
Pseudomorphic HEMT
Technical Data
ATF-36163
Features
• Low Minimum Noise Figure:
1 dB Typical at 12 GHz
0.6 dB Typical at 4 GHz
• Associated Gain:
9.4 dB Typical at 12 GHz
15.8 dB Typical at 4 GHz
• Maximum Available Gain:
11 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Cost Surface Mount
Small Plastic Package
• Tape-and-Reel Packaging
Option Available
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
SOURCE
DRAIN
SOURCE
SOURCE
SOURCE
Applications
• 12 GHz DBS Downconverters
• 4 GHz TVRO Downconverters
• S or L Band Low Noise
Amplifiers
GATE
Note:
Package marking provides
orientation and identification.
Description
The Hewlett-Packard ATF-36163
is a low-noise Pseudomorphic
High Electron Mobility Transistor
(PHEMT), in the SOT-363 (SC-70)
package. When optimally matched
for minimum noise figure, it will
provide a noise figure of 1 dB at
12 GHz and 0.6 dB at 4 GHz.
Additionally, the ATF-36163 has
low noise-resistance, which
reduces the sensitivity of noise
performance to variations in
input impedance match. This
feature makes the design of broad
band low noise amplifiers much
easier. The performance of the
ATF-36163 makes this device the
ideal choice for use in the 2nd or
3rd stage of low noise cascades.
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct
Broadcast Satellite (DBS) TV
systems, C-band TV Receive Only
(TVRO) LNAs, Multichannel
Multipoint Distribution Systems
(MMDS), X-band Radar detector
and other low noise amplifiers
operating in the 1.5 – 18 GHz
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery
(width) of 200 microns. Proven
gold-based metallization system
and nitride passivation assure
rugged, reliable devices.
36
5-79
5965-4747E
ATF-36163 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
D
P
T
P
in max
T
CH
T
STG
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
dBm
°C
°C
Absolute
Maximum
+
3
-3
-3.5
I
dss
180
+10
150
-65 to 150
Thermal Resistance:
θ
ch-c
= 160°C/W
Note:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
ATF-36163 Electrical Specifications
T
C
= 25°C, Z
O
= 50
Ω,
V
ds
= 1.5 V, I
ds
= 10 mA, (unless otherwise noted).
Symbol
NF
G
g
m
I
dss
V
p 10%
BV
GDO
Parameters and Test Conditions
Noise Figure
[1]
f =12.0 GHz
Gain at NF
[1]
f = 12.0 GHz
Transconductance
V
DS
= 1.5 V, V
GS
= 0 V
Saturated Drain Current
V
DS
= 1.5 V, V
GS
= 0 V
Pinchoff Voltage
V
DS
= 1.5 V, I
DS
= 10% of I
dss
Gate Drain Breakdown Voltage
I
G
= 30
µA
Units
dB
dB
mS
mA
V
V
Min.
9
50
15
-1.0
Typ.
1.2
10
60
25
-0.35
Max.
1.4
[1]
40
-0.15
-3.5
Note:
1. Measured in a test circuit tuned for a typical device.
ATF-36163 Typical Parameters
T
C
= 25°C, Z
O
= 50
Ω,
V
ds
= 2 V, I
ds
= 15 mA, (unless otherwise noted).
Symbol
F
min
G
a
G
max
P
1dB
V
GS
Parameters and Test Conditions
Minimum Noise Figure (Γ
source
= Γ
opt
)
Associated Gain
Maximum Available Gain
[1]
Output Power at 1 dB Gain Compression
under the power matched condition
Gate to Source Voltage for I
DS
= 15 mA
f = 4 GHz
f = 12 GHz
f = 4 GHz
f = 12 GHz
f = 4 GHz
f = 12 GHz
f = 4 GHz
f = 12 GHz
V
DS
= 2.0 V
Units
dB
dB
dB
dB
dB
dB
dBm
dBm
V
Typ.
0.6
1.0
15.8
9.4
17.2
10.9
5
5
-0.2
Note:
1. G
max
= MAG for K > 1 and G
max
= MSG for K
≤
1, which is shown on the S-parameters tables.
5-80
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