Ls
J
., U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
U257
Dual N-Channei JFET
High Frequency Amplifier
FEATURES
• 9f,>4500u,» From DC to 100MHz
• Matched V
os
, g
(
, and g
OB
ABSOLUTE MAXIMUM RATINGS
(JA=25°C unless otherwise noted)
Gate-Drain or Gate-Source Voltaga (Note 1)
-26V
Gate Current (Note 1)
60mA
Storage Temperature Range
-65*C to +200'C
Operating Temperature Range
-55'C to + 150'C
Lead Temperature (Soldering, 10sec)
+300*C
One Side
Power Dissipation
(T
A
=85'C)
Derate above 25'C
250mW
3.8mW/-C
Both Sides
500mW
7.7mW/°C
PIN CONFIGURATION
TO-99
NOTE:
Stresses above tfiose Ssted under "Absolute Maximum Ratings"
may causa permanent damage to the device. These are stress ratings only
and functional operation of the device at these Of any other notations
abort these intscated In the operational suctions onttespaciticttbni to not
Anplfatt, Exposure to absolute maximum rating conditions for extended pert-
ods may afreet device reliability.
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
Symbol
loss
Paramittr
Gate Reverse Current
(T
A
= 25'C unless otherwise specified)
Teat Conditions
Vas-16V,Vrjs-0
Mhi
Max
-100
UnMt
pA
TA-ISO-C
BVoss
VQS(oH)
IDES
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current (Note 2)
Common-Source Forward Transconductance
Common-Source Forward Trensconductance
Common-Source Output Conductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capacitance
Equivalent Input Noise Voltage
Drain Current Ratio at Zero Gale Voltage
(Note 2)
Differential Gate-Source Voltage
Transconductance Ratio
Differential Output Conductance
(Note 3)
VnS-10V,V
Q
s=0
f- 10kHz
VDQ=10V,l
D
= 5mA
l
Q
=-1uA.V
DS
-0
Vos=10V,l
D
=1nA
-260
nA
V
-26
-1
5
f=1kHz
f= 100MHz (Note 3)
f=1kHz
f- 100MHz
f-1MHz
4600
4600
-6
40
VDS-IOV,V
QS
=O
V
DS
=10V, l
D
=5mA
VoG-IOVJo-SmA
V
D
s=10V,l
D
=6mA
mA
(is
Bis
ft»
Soss
CfM
10,000
10,000
200
200
S
1.2
30
PF
MS
Cn»
«n
m
mV
nV
iSSSl
IDSSZ
|VGsi-v
osz
|
Bf>1
0.85
1
100
V|xj=iov,i
0
=emA
f=1kHz
flu*
I&X.1-9M2I
NOTES: 1. Per transiitor.
2. Pulse test required, pulie wUlh - aoo^s, duty cycle £ 3%.
3.
For design reference only, not 100% tested.
O.B5
1
20
fi
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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