4/
,
fine.
P-Channel Enhancement-Mode
Vertical DMOS Power FET's
Order Number /Package
TO-39
VP0104N2
VP0106N2
VP0109N2
TO-52
VP0104N9
VP0106N9
TO-92
VP0104N3
VP0106N3
TO-220
VP0104N5
VP0106N5
VP010PN5
Quad P-DIP Quad C-DIP
VP0104N6 VP0104N7
VP0106N6 VP0106N7
-
-
Dice
VP0104ND
VP0106ND
VP0109ND
Product Summary
BVDSS/ RDS(ON ID(ON)
BVDGS
-40V
-60V
-90V
(max)
811
(mini
-Q.5A
-0.5 A
-0.5 A
an
an
VP0109N9 VP0109IM3
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
Parameter
Drain-to-Source
Breakdown Voltage
VP0109
VP0106
VP01 04
Min
-90
-60
-40
Typ
Max
Unit
Conditions
V
ID - -imA, VGS = O
VGS(th)
AVGS(th)
IGSS
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
-1.5
-5.8
1
-3.5
-6.5
100
-10
m
1
V
mV/°C
nA
MA
mA
A
VGS = VDS. ID = -imA
ID = -imA, VGS = VDS
VGS = ±20V, V D S ^ O
VGS * 0, VDS » Max Rating
VGS = 0, VDS = 0.8 Max Rating
TA = 125°C
IDSS
ID(OIM)
RDS(ON)
ARDS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-OlM Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
-0.15
-0.50
-0.25
-1.0
11
5
0.55
15
8
1.0
60
30
B
6
10
5
6
-2.0
a
%/°c
mU
pF
VGS = -5V, VDS = -25V
VGS = -iov, VDS = -25v
VGS = -sv, ID = -o.i A
VGS • 10V, ID = -0,5A
ID = -0.5A, VGS = -10V
VDS - -25V, ID = -0.5A
GFS
Ciss
Coss
CRSS
td(ON)
tr
td(OFF)
tf
160
200
45
22
3
4
7
3
4
-1.2
400
VGS = O, VDS- -25v,
f = 1MHz,
ns
VDD = -25V, I D = 1A,
RS - 50ft
VSD
trr
V
ns
ISD = -2.5A, VGS = o '
ISD = -IA, VGS = O
E-Line (TO-92 style)
^
p
MILLIMETRES
DIMENSION
A
B
C
0
E
F
G
L
MIN
0.41
0.41
3,61
4.37
2.16
INCHES
MIN
0.016
0.016
0.142
0.172
0.085
MAX
0 0195
0,0195
0. 158
0.188
0.095
0,098
0.050 NOM
0 475
0,550
MAX
0.495
0.495
4.01
4.77
2.41
2.5
1.27 NOM
12 06
13 97
Embedded System
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