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8ETH03STRLPBF

Description
8 A, 300 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size183KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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8ETH03STRLPBF Overview

8 A, 300 V, SILICON, RECTIFIER DIODE

8ETH03STRLPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-263
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationHFRHP
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature10
Base Number Matches1
VS-8ETH03SPbF, VS-8ETH03-1PbF
Vishay High Power Products
Hyperfast Rectifier, 8 A FRED Pt
®
FEATURES
VS-8ETH03SPbF
VS-8ETH03-1PbF
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Base
cathode
2
2
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
1
N/C
3
Anode
1
N/C
3
Anode
DESCRIPTION/APPLICATIONS
Vishay HPP’s 300 V series are the state of the art hyperfast
recovery rectifiers designed with optimized performance of
forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
35 ns
8A
300 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 155 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
300
8
100
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.0
0.83
0.02
6.0
31
8
MAX.
-
1.25
1.00
20
200
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94025
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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