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8ETU04-1TRRPBF

Description
8 A, 400 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size173KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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8ETU04-1TRRPBF Overview

8 A, 400 V, SILICON, RECTIFIER DIODE, TO-262AA

VS-8ETU04SPbF, VS-8ETU04-1PbF
Vishay High Power Products
Ultrafast Rectifier, 8 A FRED Pt
®
FEATURES
VS-8ETU04SPbF
VS-8ETU04-1PbF
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
Base
cathode
2
2
1
N/C
3
Anode
1
N/C
3
Anode
DESCRIPTION/APPLICATIONS
Vishay HPP’s FRED Pt
®
series are the state of the art
ultrafast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultrafast
recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
60 ns
8A
400 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 155 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
400
8
100
16
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 400 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
400
-
-
-
-
-
-
TYP.
-
1.19
0.94
0.2
20
14
8.0
MAX.
-
1.3
1.0
10
500
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94031
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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