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8ETX06-1TRLPBF

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA
CategoryDiscrete semiconductor    diode   
File Size174KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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8ETX06-1TRLPBF Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA

8ETX06-1TRLPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-262AA
package instructionROHS COMPLIANT, TO-262, 2 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
applicationHYPERFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current110 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.024 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
VS-8ETX06SPbF, VS-8ETX06-1PbF
Vishay High Power Products
Hyperfast Rectifier, 8 A FRED Pt
®
VS-8ETX06SPbF
VS-8ETX06-1PbF
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
Base
cathode
2
2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
1
N/C
3
Anode
1
N/C
3
Anode
D
2
PAK
TO-262
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the ac-to-dc section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
15 ns
8A
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 143 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
8
110
18
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.3
1.4
0.3
35
17
8.0
MAX.
-
3.0
1.7
50
500
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94033
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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Is it Rohs certified? conform to - conform to conform to
Maker Vishay - Vishay Vishay
Parts packaging code TO-262AA - TO-263 TO-263
package instruction ROHS COMPLIANT, TO-262, 2 PIN - R-PSSO-G2 R-PSSO-G2
Contacts 3 - 3 3
Reach Compliance Code compli - unknow unknow
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