VS-8ETX06PbF, VS-8ETX06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
TO-220AC
Base
cathode
2
TO-220 FULL-PAK
• 175 °C operating junction temperature
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL E78996 approved
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
1
Cathode
3
Anode
1
Cathode
3
Anode
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
ac-to-dc section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
8ETX06PbF
8ETX06FPPbF
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-220AC, TO-220FP
8A
600 V
3.0 V
15 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 143 °C
T
C
= 106 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
8
110
18
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.3
1.4
0.3
35
17
8.0
MAX.
-
3.0
1.7
50
500
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94032
Revision: 29-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-8ETX06PbF, VS-8ETX06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 8 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 600 A/μs
V
R
= 390 V
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
15
16
17
40
2.3
4.5
20
100
31
12
195
MAX.
19
24
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDTIONS
MIN.
- 65
-
-
-
-
-
-
6.0
(5.0)
Case style TO-220AC
Case style TO-220 FULL-PAK
TYP.
-
1.4
3.4
-
0.5
2.0
0.07
-
MAX.
175
2
4.3
70
-
-
-
12
(10)
8ETX06
8ETX06FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
(FULL-PAK)
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94032
Revision: 29-Jun-10
VS-8ETX06PbF, VS-8ETX06FPPbF
Hyperfast Rectifier, 8 A FRED Pt
®
Vishay Semiconductors
100
1000
T
J
= 175 °C
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
0.0001
I
F
- Instantaneous
Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
.
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94032
Revision: 29-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-8ETX06PbF, VS-8ETX06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
10
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
.
100
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
Allowable Case Temperature (°C)
180
180
160
140
120
100
80
60
See note (1)
40
0
2
4
6
8
10
12
Square wave (D = 0.50)
Rated V
R
applied
DC
Allowable Case Temperature (°C)
170
160
DC
150
140
130
See note (1)
120
0
2
4
6
8
10
12
Square wave (D = 0.50)
Rated V
R
applied
I
F(AV)
(A) Average Forward Current
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
18
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss (W)
16
14
12
10
8
6
4
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
RMS limit
2
0
0
2
4
6
8
10
12
14
I
F(AV)
- Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
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4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94032
Revision: 29-Jun-10
VS-8ETX06PbF, VS-8ETX06FPPbF
Hyperfast Rectifier, 8 A FRED Pt
®
Vishay Semiconductors
50
300
250
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
40
I
F
= 8 A
I
F
= 16 A
200
Q
rr
(nC)
t
rr
(ns)
30
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
150
100
I
F
= 16 A
I
F
= 8 A
20
I
F
= 16 A
50
I
F
= 8 A
I
F
= 8 A
10
100
1000
0
100
1000
dI
F
/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 94032
Revision: 29-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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