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8ETX06STRR

Description
8 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size105KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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8ETX06STRR Overview

8 A, 600 V, SILICON, RECTIFIER DIODE

8ETX06STRR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTO-263
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
applicationHYPERFAST RECOVERY POWER RECTIFIER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Maximum non-repetitive peak forward current110 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.024 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
8ETX06S/8ETX06-1
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
FEATURES
8ETX06S
8ETX06-1
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
Base
cathode
2
• 175 °C operating junction temperature
2
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
3
Anode
1
N/C
3
Anode
1
N/C
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
15 ns
8A
600 V
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 143 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
8
110
18
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 µA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.3
1.4
0.3
35
17
8.0
MAX.
-
3.0
1.7
50
500
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93937
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

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8ETX06STRR 8ETX06-1 8ETX06-1TRL 8ETX06-1TRR Z2039U 8ETX06STRL
Description 8 A, 600 V, SILICON, RECTIFIER DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA TRANSIENT VOLTAGE SUPPRESSOR 8 A, 600 V, SILICON, RECTIFIER DIODE
Maker Vishay Vishay Vishay Vishay - Vishay
Parts packaging code TO-263 TO-262AA TO-262AA TO-262AA - TO-263
package instruction R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 - R-PSSO-G2
Contacts 3 3 3 3 - 3
Reach Compliance Code unknow unknow unknow unknow - unknow
ECCN code EAR99 EAR99 EAR99 EAR99 - EAR99
Other features FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT - FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
application HYPERFAST RECOVERY POWER RECTIFIER HYPERFAST RECOVERY POWER RECTIFIER HYPERFAST SOFT RECOVERY HYPERFAST SOFT RECOVERY - HYPERFAST RECOVERY POWER RECTIFIER
Shell connection CATHODE CATHODE CATHODE CATHODE - CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE - SINGLE
Diode component materials SILICON SILICON SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 - R-PSSO-G2
Maximum non-repetitive peak forward current 110 A 110 A 110 A 110 A - 110 A
Number of components 1 1 1 1 - 1
Phase 1 1 1 1 - 1
Number of terminals 2 3 3 3 - 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C - 175 °C
Maximum output current 8 A 8 A 8 A 8 A - 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE IN-LINE - SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
Maximum repetitive peak reverse voltage 600 V 600 V 600 V 600 V - 600 V
Maximum reverse recovery time 0.024 µs 0.024 µs 0.024 µs 0.024 µs - 0.024 µs
surface mount YES NO NO NO - YES
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE - SINGLE
Base Number Matches - 1 1 1 - 1
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