SEMICONDUCTOR
RoHS
8T Series
RoHS
TRIACs, 8A
Snubberless, Logic Level and Standard
MAIN FEATURES
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT(Q1)
2
2
VALUE
8
600 to 1000
5 to 50
UNIT
A
V
mA
1
1
2
3
2
3
TO-251
(I-PAK)
(8TxxF)
A2
TO-252
(D-PAK)
(8TxxG)
DESCRIPTION
The 8T
triac series is suitable for general purpose AC
switching. They can be used as an ON/OFF function in
applications such as static relays, heating regulation,
induction motor starting circuits... or for phase control
operation in light dimmers, motor speed controllers,...
The snubberless and logic level versions are specially
recommended for use on inductive loads, thanks to their
high commutation performances.
By using an internal ceramic pad, the 8T series provides
voltage insulated tab (rated at 2500V
RMS
) complying
with UL standards (File ref. :E320098)
1
A1
A2
G
2
3
TO-220AB
(non-Insulated)
(8TxxA)
TO-220AB
(lnsulated)
(8TxxAI)
A2
A1 A2
G
TO-263
(D
2
PAK)
(8TxxH)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current
(full
sine wave)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
I t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
2
VALUE
8
UNIT
A
T
c
= 110ºC
T
c
= 100ºC
t = 20 ms
t = 16.7 ms
80
84
32
T
j
=125ºC
T
j
=125ºC
50
4
1
- 40
to
+ 150
ºC
- 40
to
+ 125
A
A
2
s
A/µs
A
W
I
TSM
t p = 10 ms
F =100 Hz
T
p
=20 µs
T
j
=125ºC
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Page 1 of 7
SEMICONDUCTOR
RoHS
8T Series
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
8Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 100 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T
j
= 125°C
(dV/dt)c = 0.1 V/µs
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Without snubber
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
MIN.
MAX.
25
MIN.
20
3.5
1.5
-
TEST CONDITIONS
QUADRANT
TW
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
10
15
15
20
35
40
5.4
2.8
-
1.3
0.2
40
50
60
400
-
-
4.5
60
70
mA
80
1000
-
-
7
A/ms
V/µs
V
V
mA
MAX.
05
SW
10
CW
35
BW
50
mA
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
8Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 200 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c = 3.5 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/d
t(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
25
35
60
200
5
C
MAX.
25
50
1.3
0.2
50
50
80
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 11 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
1
mA
MAX.
MAX.
MAX.
VALUE
1.55
0.85
50
5
UNIT
V
V
mΩ
µA
Note
1:
minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
for both polarities of A2 referenced to A1.
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Page 2 of 7
SEMICONDUCTOR
RoHS
8T Series
RoHS
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
Junction to case
(AC)
S = 1 cm
2
VALUE
TO-220AB, TO-251, TO-252, TO-263
TO-220AB Insulated
TO-263
TO-252
TO-220AB Insulated, TO-220AB
TO-251
S = 0.5 cm
2
UNIT
°C/W
1.6
2.5
45
70
60
100
R
th(j-a)
Junction to ambient
°C/W
S
=
Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
8TxxA-B/ 8TxxAl-B
8TxxA-BW/8TxxAl-BW
8TxxA-C/8TxxAl-C
8TxxA-CW/8TxxAl-CW
8TxxA-SW/8TxxAl-SW
8TxxA-TW/8TxxAI-TW
8TxxG -SW
8TxxF -SW
8TxxH -SW
8TxxG -CW
8TxxH -CW
8TxxF -CW
AI:
non insulated TO-220AB package
V
V
V
V
V
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
V
V
V
V
V
50
mA
50
mA
25
mA
35
mA
10
mA
5
mA
10
mA
10
mA
10
mA
35
mA
35
mA
35
mA
Standard
Snubberless
Standard
Snubberless
Logic level
Logic level
Logic level
Logic level
Logic level
Snubberless
Snubberless
Snubberless
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
DPAK
IPAK
D
2
PAK
DPAK
D
2
PAK
IPAK
SENSITIVITY
TYPE
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
8TxxA-yy
8TxxAI-yy
8TxxF-yy
8TxxG-yy
8TxxH-yy
Note:
xx
=
voltage, yy
=
sensitivity
MARKING
8TxxA-yy
8TxxAI-yy
8TxxF-yy
8TxxG-yy
8TxxH-yy
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-251(I-PAK)
TO-252(D-PAK)
D
2
PAK
WEIGHT
2.0g
2.3g
0.40g
0.38g
2.0g
BASE Q,TY
50
50
80
80
50
DELIVERY MODE
Tube
Tube
Tube
Tube
Tube
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Page 3 of 7
SEMICONDUCTOR
RoHS
8T Series
RoHS
ORDERING INFORMATION SCHEME
8
Current
8 = 8A
T 06
A - BW
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
AF= TO-220F(ISOWAT TO-220AB, insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
H = TO-263 (D
2
PAK)
I
GT
Sensitivity
B
= 50mA
Standard
C
= 25mA
Standard
SW
= 10mA
Logic Level
BW
= 50mA
Snubberless
CW
= 35mA
Snubberless
TW
= 5mA
Logic Level
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
P
(W)
10
9
8
7
6
5
4
3
2
1
0
0
1
2
10
9
8
7
6
5
4
3
2
1
5
6
7
8
0
Fig.2 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
TO-220AB ( insulated )
I
T(RMS) (A)
3
4
T
C
(°C)
0
25
50
75
TO-220AB
TO-251
TO-252
TO-263
100
125
Fig.2-2 RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)
I
T(RMS)
(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
1E-2
D
2
PAK
(S=1cm
2
)
DPAK
(S=0.5cm
2
)
Fig.3 Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
DPAK/IPAK
Zth(j-a)
1E-1
TO-220AB/D PAK
Zth(j-a)
2
Tamb(°C)
50
75
100
125
1E-3
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
5E+2
1E+2
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Page 4 of 7
SEMICONDUCTOR
RoHS
8T Series
RoHS
Fig.4 On-state characteristics (maximum values).
ITM
(A)
100
T
j
max.
Vto
= 0.85
V
Rd
= 50
mΩ
T
j
=T
j
max
Fig.5 Surge peak on-state current versus number
of cycles.
ITSM
(A)
90
80
70
60
50
40
Non repetitive
T
j
initial=25°C
Repetitive
T
c
=100°C
t=20ms
One cycle
10
T
j
=25
°
C
30
20
VTM(V)
10
0
3.0
3.5
4.0
4.5
5.0
1
Number of cycles
1
0.5
1.0
1.5
2.0
2.5
10
100
1000
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
lTSM (A), l
2
t(A
2
s)
1000
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lGT,lH,lL[T
j
] / lGT,lH,lL [T
j
=25°C]
2.5
T
j
initial=25°C
2.0
dI/dt limitation:
50A/µs
IGT
ITSM
1.5
100
1.0
I
2
t
IH
&
IL
0.5
tp
(ms)
T
j
(°C)
10
0.01
0.10
1.00
10.00
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig.8-1 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Snubberless & Logic Level Types
Fig.8-2 Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values). Standard Types
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
TW
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
1.8
1.6
1.4
CW/BW
C
B
1.2
SW
1.0
0.8
(dV/dt)c (V/µs)
0.6
10.0
100.0
0.4
0.1
1.0
(dV/dt)c (V/µs)
10.0
100.0
0.1
1.0
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Page 5 of 7
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