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M36L0R7060U3ZAME

Description
Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
Categorystorage    storage   
File Size559KB,29 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M36L0R7060U3ZAME Overview

Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88

M36L0R7060U3ZAME Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA,
Contacts88
Reach Compliance Codeunknow
JESD-30 codeR-PBGA-B88
length10 mm
memory density134217728 bi
Memory IC TypeMEMORY CIRCUIT
memory width16
Number of functions1
Number of terminals88
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width8 mm
M36L0Rx0x0UL3
128- or 256-Mbit (mux I/O, multiple bank, multilevel, burst) flash
memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP
Target Specification
Features
Multichip package
– 1 die of 128 Mbits (8 Mbits x16) or 256
Mbits (16 Mbits x16), mux I/O multiple
bank, multilevel, burst flash memory
– 1 die of 32 or 64 Mbits mux I/O, burst
PSRAM
Supply voltage
– V
DDF
= V
DDP
= V
DDQF
= 1.7 to 1.95 V
– V
PPF
= 9 V for fast program
Electronic signature
– Manufacturer code: 20h
– Device codes (top flash configuration):
M36L0R7050U3/M36L0R7060U3: 882Eh
M36L0R8050U3/M36L0R8060U3: 881Ch
– Device codes (bottom flash configuration)
M36L0R7050L3/M36L0R7060L3: 882Fh
M36L0R8050L3/M36L0R8060L3: 881Dh
Synchronous/asynchronous read
– Synchronous burst read mode: 66 MHz
– Random access: 70 ns
Programming time
– 2.5 µs typical word program time using
buffer enhanced factory program command
Memory organization
– Multiple bank memory array: 8-Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– Program/erase in one bank, read in others
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP
F
for block lock-down
– Absolute write protection with V
PPF
= V
SS
FBGA
TFBGA56 (ZS)
8 x 6 mm
TFBGA88 (ZAM)
8 x 10 mm
Security
– 64-bit unique device number
– 2112-bit user programmable OTP cells
Common flash interface (CFI)
100,000 program/erase cycles per block
Access time: 70 ns
Synchronous modes:
– Synchronous write: continuous burst
– Synchronous read: continuous burst or
fixed length: 4, 8 or 16 words for 32-Mbit
devices; 4, 8, 16 or 32 words for 64-Mbit
devices
– Maximum clock frequency: 83 MHz
Low-power features
– Partial array self-refresh (PASR)
– Deep power-down (DPD) mode
– Automatic temperature-compensated self-
refresh
Device summary
M36L0Rx0xoUL3
PSRAM
Flash memory
Table 1.
M36L0R7050U3
M36L0R7060U3
M36L0R8050U3
M36L0R8060U3
M36L0R7050L3
M36L0R7060L3
M36L0R8050L3
M36L0R8060L3
March 2008
Rev 2
1/29
www.numonyx.com
1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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