PBLS2022D
20 V, 1.8 A PNP BISS loadswitch
Rev. 02 — 6 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I
I
I
I
I
Low V
CEsat
(BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Space-saving solution
Reduction of component count
AEC-Q101 qualified
1.3 Applications
I
I
I
I
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
single pulse;
t
p
≤
1 ms
I
C
=
−1.8
A;
I
B
=
−100
mA
open base
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
78
Max
−20
−1.8
−3
117
Unit
V
A
A
mΩ
TR1; PNP low V
CEsat
transistor
TR2; NPN resistor-equipped transistor
V
CEO
I
O
R1
R2/R1
[1]
-
-
3.3
0.8
-
-
4.7
1
50
100
6.1
1.2
V
mA
kΩ
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
PBLS2022D
20 V, 1.8 A PNP BISS loadswitch
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
base TR1
input (base) TR2
output (collector) TR2
R2
Simplified outline
6
5
4
Graphic symbol
6
5
4
GND (emitter) TR2
collector TR1
emitter TR1
1
2
3
TR1
TR2
R1
1
2
3
006aab506
3. Ordering information
Table 3.
Ordering information
Package
Name
PBLS2022D
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
KB
Type number
PBLS2022D
PBLS2022D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
2 of 16
NXP Semiconductors
PBLS2022D
20 V, 1.8 A PNP BISS loadswitch
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
−20
−20
−5
−1.8
−3
−300
−1
370
480
630
50
50
10
+30
−10
100
100
200
Unit
V
V
V
A
A
mA
A
mW
mW
mW
V
V
V
V
V
mA
mA
mW
TR1; PNP low V
CEsat
transistor
TR2; NPN resistor-equipped transistor
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
Per device
P
tot
total power dissipation
T
amb
≤
25
°C
[1]
[2]
[3]
open emitter
open base
open collector
output current
peak collector current
total power dissipation
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1][2]
[3]
-
-
-
-
-
-
−55
−65
480
590
760
150
+150
+150
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PBLS2022D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
3 of 16
NXP Semiconductors
PBLS2022D
20 V, 1.8 A PNP BISS loadswitch
1000
P
tot
(mW)
800
(1)
006aab507
(2)
600
400
(3)
200
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves
6. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[2]
[3]
Thermal characteristics
Parameter
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
260
211
165
100
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PBLS2022D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
4 of 16
NXP Semiconductors
PBLS2022D
20 V, 1.8 A PNP BISS loadswitch
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.50
0.20
0.10
0.05
10
0.01
0
0.02
006aab508
0.75
0.33
1
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab509
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.50
0.20
0.10
10
0.05
0.02
0.01
1
0
0.75
0.33
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3.
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBLS2022D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
5 of 16
京公网安备 11010802033920号
EEWORLD
