2016-01-04
Silicon NPN Phototransistor
Version 1.3
SFH 300 FA
Features:
•
Spectral range of sensitivity:
(typ) 730 ... 1120 nm
•
Package:
5mm Radial (T 1 ¾), Epoxy
•
Special:
High linearity
•
Available in groups
Applications
•
Photointerrupters
•
Industrial electronics
•
For control and drive circuits
•
Computer-controlled flashes
Ordering Information
Type:
Photocurrent
I
PCE
[µA]
λ = 950 nm, E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
SFH 300 FA
SFH 300 FA-3/4
Note:
Ordering Code
≥ 630
≥ 1000
Q62702P1193
Q62702P3585
Only one bin within one packing unit (variation less than 2:1)
2016-01-04
1
Version 1.3
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operating and storage temperature range
Collector-emitter voltage
Collector current
Collector surge current
(τ < 10 µs)
Emitter-collector voltage
Total Power dissipation
Thermal resistance
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics
(T
A
= 25 °C)
Parameter
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of chip area
Half angle
Capacitance
(V
CE
= 0 V, f = 1 MHz, E = 0)
Dark current
(V
CE
= 20 V, E = 0)
Rise and fall time
(I
C
= 1 mA, V
CC
= 5 V, R
L
= 1 kΩ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
λ
S max
λ
10%
A
LxW
ϕ
C
CE
Values
880
Symbol
T
op
; T
stg
V
CE
I
C
I
CS
V
EC
P
tot
R
thJA
V
ESD
Values
-40 ... 100
35
50
100
7
200
375
2000
SFH 300 FA
Unit
°C
V
mA
mA
V
mW
K/W
V
Unit
nm
nm
mm
2
mm x
mm
°
pF
nA
µs
(typ) 730
... 1120
0.11
(typ) 0.55 x
0.55
± 25
7.5
1 (≤ 50)
10
(typ (max)) I
CE0
(typ)
t
r
, t
f
2016-01-04
2
Version 1.3
Grouping
(T
A
= 25 °C, λ = 950 nm)
Group
Min Photocurrent
Max Photocurrent Rise and fall time
SFH 300 FA
Collector-emitter
saturation
voltage
I
C
= I
PCEmin
x 0.3, E
e
= 0.5 mW/cm
2
V
CEsat
[mV]
130
140
150
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE, min
[µA]
-2
-3
-4
Note.:
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE, max
[µA]
1250
2000
I
C
= 1 mA, V
CC
= 5
V, R
L
= 1 kΩ
t
r
, t
f
[µs]
7.5
10
10
630
1000
1600
I
PCEmin
is the min. photocurrent of the specified group.
Relative Spectral Sensitivity
1)
page 8
S
rel
= f(λ)
100
OHF04044
Photocurrent
1)
page 8
I
PCE
= f(E
e
),
V
CE
= 5 V
S
rel
%
80
70
60
50
40
30
20
10
0
400 500 600 700 800 900
nm 1100
λ
2016-01-04
3
Version 1.3
Photocurrent
1)
page 8
I
PCE
/ I
PCE
(25°C) = f(T
A
), V
CE
= 5 V
Dark Current
1)
page 8
I
CEO
= f(V
CE
), E = 0
SFH 300 FA
I
CEO
10
1
nA
OHF04049
10
0
10
-1
10
-2
0
5
10
15
20
25
30 V 35
V
CE
Dark Current
1)
page 8
I
CEO
= f(T
A
), E = 0
Collector-Emitter Capacitance
1)
page 8
C
CE
= f(V
CE
), f = 1 MHz, E = 0
OHF04050
I
CEO
10
4
nA
10
3
8
pF
C
CE
7
6
OHF04051
10
2
5
10
1
4
3
2
10
0
10
-1
1
10
-2
-25
0
25
50
75 ˚C 100
0
-3
10
10
-2
10
-1
10
0
10
1
V 10
2
T
A
V
CE
2016-01-04
4
Version 1.3
Directional Characteristics
1)
page 8
S
rel
= f(ϕ)
SFH 300 FA
Package Outline
Area not flat
Emitter
0.6 (0.024)
0.4 (0.016)
1.0 (0.039)
0.7 (0.028)
2.54 (0.100)
spacing
Chip position
11.6 (0.457)
11.2 (0.441)
4.5 (0.177)
4.2 (0.165)
5.9 (0.232)
5.5 (0.217)
1.3 (0.051)
1.0 (0.039)
1.8 (0.071)
1.2 (0.047)
7.8 (0.307)
7.5 (0.295)
ø5.1 (0.201)
0.6 (0.024)
0.4 (0.016)
25.2 (0.992)
24.2 (0.953)
Collector
9.0 (0.354)
8.2 (0.323)
GEOY6652
Dimensions in mm (inch).
Package
5mm Radial (T 1 ¾), Epoxy
2016-01-04
5
Embedded System
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