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XN04115

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-74, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size59KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

XN04115 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-74, 6 PIN

XN04115 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-74
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G6
JESD-609 codee6
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Composite Transistors
XN04115
(XN4115)
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
0.65±0.15
+0.2
2.8
–0.3
1.5
–0.05
6
+0.25
0.65±0.15
1
0.95
2.9
–0.05
G
G
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
I
Basic Part Number of Element
G
1.1
–0.1
0.4±0.2
I
Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Ratings
–50
–50
–100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
Rating Collector to base voltage
of
Collector to emitter voltage
element
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol:
6T
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
I
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
(Ta=25˚C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
EB
= –6V, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
CB
= –10V, I
E
= 1mA, f = 200MHz
–30%
80
10
+30%
–4.9
– 0.2
160
min
–50
–50
– 0.1
– 0.5
– 0.01
460
– 0.25
V
V
V
MHz
kΩ
typ
max
Unit
V
V
µA
µA
mA
Note.) The Part number in the Parenthesis shows conventional part number.
0 to 0.05
UNR1115(UN1115)
×
2 elements
0.1 to 0.3
0.8
0.16
–0.06
+0.2
+0.1
1.45±0.1
I
Features
0.3
–0.05
0.5
–0.05
+0.1
+0.1
1
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