This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XN04556G
Silicon NPN epitaxial planar type
For low-frequency amplification
■
Features
■
Package
•
Code
Mini6-G3
•
Pin Name
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Two elements incorporated into one package
•
Reduction of the mounting area and assembly cost by one half
•
2SD1149
×
2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
T
stg
Parameter
on
tin
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
Collector-base voltage (Emitter open)
ce
Collector-emitter voltage (Base open)
Ma
int
en
an
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Noise voltage
Transition frequency
V
CE(sat)
NV
f
T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
■
Marking Symbol: EP
■
Internal Connection
(C2)
4
(B1)
5
Rating
100
100
15
20
50
Unit
V
V
V
■
Basic Part Number
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
(E1)
6
mA
mA
°C
300
150
mW
°C
Tr2
Tr1
−55
to
+150
3
(E2)
2
(B2)
1
(C1)
ue
Conditions
Min
100
Typ
Max
Unit
V
isc
/D
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
100
15
V
V
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
0.1
1.0
µA
µA
V
V
CE
= 10 V, I
C
= 2 mA
I
C
=
10 mA, I
B
=
1 mA
400
2 000
0.20
0.05
80
V
CE
=
10 V, I
C
=
1 mA, G
V
=
80 dB
R
g
=
100 kΩ, Function
=
FLAT
mV
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
150
MHz
Publication date: March 2009
SJJ00489AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
XN04556G
P
T
T
a
500
80
T
a
=
25°C
I
C
V
CE
60
I
C
V
BE
V
CE
=
10 V
25°C
T
a
=
75°C
−25°C
Total power dissipation
P
T
(mW)
400
50
Collector current I
C
(mA)
60
300
I
B
=
100
µA
80
µA
60
µA
50
µA
40
µA
30
µA
20
µA
10
µA
Collector current I
C
(mA)
40
40
30
0
0
40
80
120
160
Ambient temperature
T
a
(
°C
)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
10
1
25°C T
a
=
75°C
−25°C
0.1
ue
0.01
0.1
1
10
100
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
an
ce
6
/D
C
ob
V
CB
isc
on
tin
Collector current I
C
(mA)
Ma
int
en
5
I
E
=
0
f
=
1 MHz
T
a
=
25°C
4
Noise voltage NV (mV)
Noise voltage NV (mV)
3
2
1
0
1
10
100
Collector-base voltage V
CB
(V)
2
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
M
ain
Di
sc te
on na
tin nc
ue e/
d
20
20
200
100
10
2.0
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
h
FE
I
C
f
T
I
E
1 800
V
CE
=
10 V
200
V
CB
=
10 V
T
a
=
25°C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
1 500
T
a
=
75°C
160
1 200
25°C
120
900
−25°C
80
600
300
40
0
0.1
1
10
100
0
−
0.1
−1
−10
−100
Collector current I
C
(mA)
Emitter current I
E
(mA)
NV
I
C
NV
V
CE
100 V
=
10 V
CE
G
V
=
80 dB
Function
=
FLAT
T
=
25°C
80
a
R
g
=
100 kΩ
60
100
R
g
=
100 kΩ
80
60
22 kΩ
22 kΩ
40
5 kΩ
40
5 kΩ
20
20
0
0.01
0
0.1
1
I
C
=
1 mA
G
V
=
80 dB
Function
=
FLAT
T
a
=
25°C
1
10
100
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
SJJ00489AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20080805
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
t in
ic.
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
京公网安备 11010802033920号
EEWORLD
