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UPD44325182BF5-E40Y-FQ1-A

Description
2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
Categorystorage    storage   
File Size387KB,36 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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UPD44325182BF5-E40Y-FQ1-A Overview

2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165

UPD44325182BF5-E40Y-FQ1-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeBGA
package instructionLBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codeunknow
ECCN code3A991
Maximum access time0.45 ns
Maximum clock frequency (fCLK)250 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
length17 mm
memory density37748736 bi
Memory IC TypeQDR SRAM
memory width18
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.46 mm
Maximum standby current0.43 A
Minimum standby current1.7 V
Maximum slew rate0.74 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width15 mm
Datasheet
μ
PD44325092B
μ
PD44325182B
μ
PD44325362B
36M-BIT QDR
TM
II SRAM
2-WORD BURST OPERATION
Description
The
μ
PD44325092B is a 4,194,304-word by 9-bit, the
μ
PD44325182B is a 2,097,152-word by 18-bit and the
μ
PD44325362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with
advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44325092B,
μ
PD44325182B and
μ
PD44325362B integrate unique synchronous peripheral circuitry
and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the
positive edge of K and K#. These products are suitable for application which require synchronous operation,
high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
R10DS0038EJ0200
Rev.2.00
August 11, 2011
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (15 x 17)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 20
μ
s after clock is resumed.
User programmable impedance output (35 to 70
Ω)
Fast clock cycle time : 3.3 ns (300 MHz), 3.5 ns (287 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
R10DS0038EJ0200 Rev.2.00
August 11, 2011
Page 1 of 36

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