Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RFUS20NS6SFH
Series
Ultra Fast Recovery
Dimensions(Unit
: mm)
Land
size figure(Unit
: mm)
Applications
General rectification
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
Structure
②
①
Construction
Silicon epitaxial planer
Taping
dimensions(Unit
: mm)
③
Absolute
maximum ratings
(Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
V
RM
Reverse voltage
V
R
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
Electrical
characteristics(Tj=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Io
I
FSM
Tj
Tstg
Conditions
Duty0.5
Direct voltage
60Hz half sin wave resistive load ,
Limits
600
600
20
100
150
55
to
150
Unit
V
V
A
A
C
C
Tc=36C
1/2 Io per diode
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Symbol
V
F
I
R
trr
Rth(j-c)
Conditions
I
F
=20A
V
R
=600V
I
F
=0.5A,I
R
=1A,Irr=0.25×I
R
junction to case
Min.
-
-
-
-
Typ.
2.4
0.05
23
-
Max.
2.8
10
35
2
Unit
V
μA
ns
C/W
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1/3
2011.06 - Rev.A
RFUS20NS6SFH
Electrical
characteristic curves
100
Tj=125C
Tj=150C
100000
Data Sheet
1000000
Tj=150C
Tj=125C
1000
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
FORWARD CURRENT : I
F
(A)
10
REVERSE CURRENT : I
R
(nA)
f=1MHz
Tj=25C
Tj=25C
Tj=75C
10000
Tj=75C
1000
100
10
1
Tj=25C
100
1
0.1
0
1000
2000
3000
4000
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
0
50
100
150
200
250
300
350
10
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
2500
100
600
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
FORWARD VOLTAGE : V
F
(mV)
2400
REVERSE CURRENT : I
R
(nA)
T½=25C
I
F
=10A
n=20pcs
AVE : 71.5nA
T½=25C
V
R
=600V
n=20pcs
550
Ta=25C
f=1MHz
V
R
=0V
n=10pcs
2300
10
500
2200
AVE : 2264mV
2100
450
AVE : 492pF
2000
V
F
DISPERSION MAP
1
I
R
DISPERSION MAP
400
Ct DISPERSION MAP
300
250
200
150
100
50
0
I
FSM
DISRESION MAP
I
FSM
8.3ms
1cyc
30
1000
T½=25C
I
F
=0.5A
I
R
=1A
Irr=0.25×I
R
n=10pcs
REVERSE RECOVERY TIME : trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
20
15
10
5
0
AVE : 26.1ns
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
25
100
AVE : 144.5A
10
I
FSM
8.3ms
8.3ms
1cyc.
1
1
trr DISPERSION MAP
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
1000
5
4.5
10
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
4
3.5
3
2.5
2
1.5
1
0.5
0
AVE : 0.94kV
AVE : 3.76kV
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
I
FSM
Rth(j-c)
time
100
1
10
1
10
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
100
C=200pF
R=0
C=100pF
R=1.5k
0.1
0.001
0.01
0.1
1
10
100
1000
ESD DISPERSION MAP
TIME : t(s)
Rth-t CHARACTERISTICS
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2/3
2011.06 - Rev.A
RFUS20NS6SFH
Data Sheet
90
D.C.
80
70
D=0.8
D=0.5
half sin wave
D=0.2
D=0.1
D=0.05
35
0A
Io
V
R
D=t/T
T
V
R
=480V
Tj=150C
30
D.C.
D=0.8
0V
t
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
60
50
40
30
20
10
0
0
5
25
20
15
D=0.5
half sin wave
D=0.2
10
5
0
D=0.1
D=0.05
10
15
20
25
30
35
0
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
30
60
90
120
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
150
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3/3
2011.06 - Rev.A
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