RMH170N04
Nch 40V 17A Power MOSFET
lOutline
Datasheet
V
DSS
R
DS(on)
at 10V (Max.)
R
DS(on)
at 4.5V (Max.)
40V
5.6mW
7.1mW
17A
2.0W
SOP8
(8)
(7)
(6)
(5)
I
D
P
D
lFeatures
1) Low on - resistance.
(1)
(2)
(3)
(4)
lInner
circuit
2) High Power Small Mold Package (SOP8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
5) 100% UIS Tested
(1)
(2)
(3)
(4)
Source
Source
Source
Gate
(5)
(6)
(7)
(8)
Drain
Drain
Drain
Drain
*1
BODY DIODE
lPackaging
specifications
Packaging
lApplication
DC/DC converters
Type
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute
maximum ratings(T
a
= 25°C)
,unless otherwise specified
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D *1
I
D,pulse
V
GSS
P
D
*3
*2
Taping
330
12
2,500
TB
RMH170N04
Value
40
17
68
20
2.0
150
-55
to
+150
Unit
V
A
A
V
W
°C
°C
T
j
T
stg
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© 2013 ROHM Co., Ltd. All rights reserved.
1/10
2013.09 - Rev.A
RMH170N04
lThermal
resistance
Parameter
Symbol
R
thJA *4
R
thJC
Values
Min.
-
-
Typ.
-
-
Data Sheet
Max.
62.5
-
Unit
°C/W
°C/W
Thermal resistance, junction - ambient
lElectrical
characteristics(T
a
= 25°C)
,unless otherwise specified
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
Symbol
Conditions
Values
Min.
40
Typ.
-
Max.
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
V
ΔV
(BR)DSS
I
D
=1mA
ΔT
j
referenced to 25°C
I
DSS
I
GSS
V
GS (th)
ΔV
(GS)th
ΔT
j
R
DS(on)
R
G
g
fs *4
*4
-
-
-
1.0
-
-
-
-
10.0
31.5
-
-
-
-3.7
4.0
5.1
1.3
-
-
1
100
2.5
-
5.6
7.1
-
-
mV/°C
mA
nA
V
mV/°C
V
DS
= 40V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
I
D
=1mA
referenced to 25°C
V
GS
=10V, I
D
=17A
V
GS
=4.5V, I
D
=17A
f = 1MHz, open drain
V
DS
=10V, I
D
=17A
mW
W
S
*1 Limited only by maximum temperature allowed.
*2 Pw
10ms, Duty cycle
1%
*3 Mounted on a CERAMIC board
*4 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
2/10
2013.09 - Rev.A
RMH170N04
lElectrical
characteristics(T
a
= 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on) *4
t
r *4
t
d(off)
t
f *4
*4
Data Sheet
Conditions
V
GS
= 0V
V
DS
= 20V
f = 1MHz
V
DD
⋍
20V, V
GS
= 10V
I
D
= 8.5A
R
L
= 2.3W
R
G
= 10W
Values
Min.
-
-
-
-
-
-
-
Typ.
2126
470
103
19.2
9.0
61.0
15.8
Max.
-
-
-
-
-
-
-
Unit
pF
ns
lGate
Charge characteristics(T
a
= 25C)
Parameter
Symbol
Conditions
V
DD
⋍
20V, I
D
=17A
V
GS
= 10V
Values
Min.
-
Typ.
31.9
Max.
-
Unit
Total gate charge
Q
g *4
Gate - Source charge
Gate - Drain charge
Q
gs *4
Q
gd *4
V
DD
⋍
20, I
D
=17A
V
GS
= 4.5V
-
-
-
15.5
7.0
3.6
-
-
-
nC
lBody
diode electrical characteristics
(Source-Drain)(T
a
= 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
Symbol
Conditions
Values
Min.
-
-
Typ.
-
-
Max.
1.67
1.2
Unit
I
S
*1
T
a
= 25°C
V
GS
= 0V, I
s
= 1.67A
A
V
V
SD *4
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3/10
2013.09 - Rev.A
RMH170N04
lElectrical
characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
Fig.2 Maximum Safe Operating Area
100
P
W
= 100ms
P
W
= 1ms
Power Dissipation : P
D
/P
D
max. [%]
100
10
Drain Current : I
D
[A]
80
60
40
20
0
P
W
= 10ms
DC Operation
1
Operation in this area
is limited by R
DS
(on)
(V
GS
= 10V)
0.1
T
a
=25ºC
Single Pulse
Mounted on a CERAMIC board.
0
50
100
150
200
0.01
0.1
1
10
100
Junction Temperature : T
j
[°C]
Drain - Source Voltage : V
DS
[V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
10
T
a
=25ºC
1
Fig.4 Single Pulse Maximum
Power dissipation
100000
T
a
=25ºC
Single Pulse
Peak Transient Power : P(W)
10000
1000
0.1
0.01
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single
Rth(ch-a)=62.5ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on a CERAMIC board.
100
10
0.001
0.0001
0.01
1
100
1
0.0001
0.01
1
100
Pulse Width : P
W
[s]
Pulse Width : P
W
[s]
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4/10
2013.09 - Rev.A
RMH170N04
lElectrical
characteristic curves
Data Sheet
Fig.5 Typical Output Characteristics(I)
16
14
Fig.6 Typical Output Characteristics(II)
16
14
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
T
a
=25ºC
Pulsed
V
GS
= 3.0V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.0V
T
a
=25ºC
Pulsed
Drain Current : I
D
[A]
Drain Current : I
D
[A]
12
10
8
6
4
2
0
0
12
10
8
6
4
2
V
GS
= 2.5V
V
GS
= 2.5V
0.2
0.4
0.6
0.8
1
0
0
2
4
6
8
10
Drain - Source Voltage : V
DS
[V]
Drain - Source Voltage : V
DS
[V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
60
Fig.8 Typical Transfer Characteristics
100
V
DS
= 10V
Pulsed
10
Drain Current : I
D
[A]
40
1
0.1
20
V
GS
= 0V
I
D
= 1mA
Pulsed
0
-50
0
50
100
150
0.01
T
a
= 125ºC
T
a
= 75ºC
T
a
= 25ºC
T
a
=
-25ºC
0.001
0
0.5
1
1.5
2
2.5
3
3.5
Junction Temperature : T
j
[
°C
]
Gate - Source Voltage : V
GS
[V]
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5/10
2013.09 - Rev.A
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