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1N6660T1E3

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA,
CategoryDiscrete semiconductor    diode   
File Size648KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1N6660T1E3 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA,

1N6660T1E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codecompli
ECCN codeEAR99
applicationPOWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Maximum non-repetitive peak forward current300 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage45 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formPIN/PEG
Terminal locationSINGLE
Base Number Matches1
1N6660(R), CAT1, CCT1 and DT1
Silicon Dual Schottky Power Rectifier
30 Amp, 45 Volt
Qualified per MIL-PRF-19500/608
DESCRIPTION
This Dual Schottky rectifier device is military qualified up to a JANTXV level for high-reliability
applications. This TO-254 packaged product is available in three polarity options.
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
TO-254AA Package
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 1N6660.
Hermetically isolated TO-254AA package.
Available in standard, reverse, common cathode, common anode and doubler configurations.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/608.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
High frequency operation.
Low forward voltage drop.
MAXIMUM RATINGS
@ T
A
= +25 C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
1N6660CCT1
1N6660CAT1
1N6660DT1
Thermal Resistance Junction-to-Ambient
Working Peak Reverse Voltage
DC Blocking Voltage
Surge Peak Forward Current @ tp = 8.3 ms half-sine wave
(1)
Average Rectified Output Current
Note:
o
Symbol
T
J
and
T
STG
R
ӨJC
Value per
diode
-65 to +150
Die 1
1.65
2.8
2.8
50
45
45
300
15
Die 2
1.65
2.8
1.65
Unit
o
C
o
C/W
R
ӨJA
V
RWM
V
R
I
FSM
I
O
o
C/W
V
V
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
1. See
Figures 1 and 2
for derating of entire package (30 Amps).
T4-LDS-0015, Rev. 3 (6/14/13)
©2013 Microsemi Corporation
Page 1 of 6
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