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K4D551638D-TC450

Description
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Categorystorage    storage   
File Size232KB,18 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4D551638D-TC450 Overview

DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

K4D551638D-TC450 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSSOP66,.46
Contacts66
Reach Compliance Codecompli
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)222 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
length22.22 mm
memory density268435456 bi
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals66
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature65 °C
Minimum operating temperature
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply2.6 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.07 A
Maximum slew rate0.39 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
width10.16 mm
K4D551638D-TC
256M GDDR SDRAM
256Mbit GDDR SDRAM
4M x 16Bit x 4 Banks
Graphic Double Data Rate
Synchronous DRAM
Revision 1.8
October 2003
Samsung Electronics reserves the right to change products or specification without notice.
- 1 -
Rev 1.8 (Oct. 2003)
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