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K4F640412B-JL45

Description
Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
Categorystorage    storage   
File Size369KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4F640412B-JL45 Overview

Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

K4F640412B-JL45 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOJ
package instructionSOJ, SOJ32,.44
Contacts32
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE
Maximum access time45 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J32
JESD-609 codee0
length20.96 mm
memory density67108864 bi
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals32
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ32,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height3.76 mm
self refreshYES
Maximum standby current0.0003 A
Maximum slew rate0.13 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
K4F660412B,K4F640412B
CMOS DRAM
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 16Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4F660412B-JC/L(3.3V, 8K Ref., SOJ)
- K4F640412B-JC/L(3.3V, 4K Ref., SOJ)
- K4F660412B-TC/L(3.3V, 8K Ref., TSOP)
- K4F640412B-TC/L(3.3V, 4K Ref., TSOP)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
Active Power Dissipation
Unit : mW
Speed
-45
-50
-60
8K
360
324
288
4K
468
432
396
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V±0.3V power supply
Refresh Cycles
Part
NO.
K4F660412B*
K4F640412B
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
L-ver
128ms
RAS
CAS
W
Control
Clocks
Vcc
Vss
FUNCTIONAL BLOCK DIAGRAM
VBB Generator
Refresh Control
Refresh Counter
Memory Array
16,777,216 x 4
Cells
Sense Amps & I/O
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Refresh Timer
Row Decoder
Data in
Buffer
DQ0
to
DQ3
Data out
Buffer
OE
Performance Range
Speed
-45
-50
-60
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
80ns
90ns
110ns
t
PC
31ns
35ns
40ns
A0~A12
(A0~A11)*1
A0~A10
(A0~A11)*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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