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M378B5673GB0-CH9

Description
DDR DRAM Module, 256MX64, CMOS, HALOGEN FREE AND ROHS COMPLIANT, UDIMM-240
Categorystorage    storage   
File Size2MB,41 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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M378B5673GB0-CH9 Overview

DDR DRAM Module, 256MX64, CMOS, HALOGEN FREE AND ROHS COMPLIANT, UDIMM-240

M378B5673GB0-CH9 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
package instructionDIMM, DIMM240,40
Reach Compliance Codeunknow
access modeDUAL BANK PAGE BURST
Other featuresAUTO/SELF REFRESH; WD-MAX
Maximum clock frequency (fCLK)667 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N240
length133.35 mm
memory density17179869184 bi
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals240
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize256MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM240,40
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply1.5 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height30.15 mm
self refreshYES
Maximum standby current0.16 A
Maximum slew rate1.16 mA
Maximum supply voltage (Vsup)1.575 V
Minimum supply voltage (Vsup)1.425 V
Nominal supply voltage (Vsup)1.5 V
surface mountNO
technologyCMOS
Temperature levelOTHER
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
width4 mm

M378B5673GB0-CH9 Preview

Rev. 1.2, Aug. 2011
M378B2873GB0
M391B2873GB0
M378B5673GB0
M391B5673GB0
240pin Unbuffered DIMM
based on 1Gb G-die
78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2011 Samsung Electronics Co., Ltd. All rights reserved.
-1-
Unbuffered DIMM
datasheet
History
Draft Date
Nov. 2010
Dec. 2010
Apr. 2011
Jul. 2011
Aug. 2011
Rev. 1.2
DDR3 SDRAM
Revision History
Revision No.
1.0
1.01
1.1
1.11
1.2
- First Release
- Corrected typo
- Added module line up (2GB ECC UDIMM)
- Corrected typo
- Changed timing parameters (Setup/Hold time)
Remark
-
-
-
-
-
Editor
S.H.Kim
S.H.Kim
J.Y.Lee
J.Y.Lee
J.Y.Lee
-2-
Unbuffered DIMM
datasheet
Rev. 1.2
DDR3 SDRAM
Table Of Contents
240pin Unbuffered DIMM based on 1Gb G-die
1. DDR3 Unbuffered DIMM Ordering Information ............................................................................................................. 4
2. Key Features................................................................................................................................................................. 4
3. Address Configuration .................................................................................................................................................. 4
4. x64 DIMM Pin Configurations (Front side/Back side) ................................................................................................... 5
5. x72 DIMM Pin Configurations (Front side/Back side) ................................................................................................... 6
6. Pin Description ............................................................................................................................................................. 7
7. SPD and Thermal Sensor for ECC UDIMMs ................................................................................................................ 7
8. Input/Output Functional Description.............................................................................................................................. 8
8.1 Address Mirroring Feature ....................................................................................................................................... 9
8.1.1. DRAM Pin Wiring Mirroring .............................................................................................................................. 9
9. Function Block Diagram: ............................................................................................................................................... 10
9.1 1GB, 128Mx64 Non ECC Module (Populated as 1 rank of x8 DDR3 SDRAMs) ..................................................... 10
9.2 1GB, 128Mx72 ECC Module (Populated as 1 rank of x8 DDR3 SDRAMs) ............................................................ 11
9.3 2GB, 256Mx64 Non ECC Module (Populated as 2 ranks of x8 DDR3 SDRAMs) ................................................... 12
9.4 2GB, 256Mx72 ECC Module (Populated as 2 ranks of x8 DDR3 SDRAMs).......................................................... 13
10. Absolute Maximum Ratings ........................................................................................................................................ 14
10.1 Absolute Maximum DC Ratings............................................................................................................................. 14
10.2 DRAM Component Operating Temperature Range .............................................................................................. 14
11. AC & DC Operating Conditions................................................................................................................................... 14
11.1 Recommended DC Operating Conditions (SSTL-15)............................................................................................ 14
12. AC & DC Input Measurement Levels .......................................................................................................................... 15
12.1 AC & DC Logic Input Levels for Single-ended Signals .......................................................................................... 15
12.2 V
REF
Tolerances.................................................................................................................................................... 16
12.3 AC and DC Logic Input Levels for Differential Signals .......................................................................................... 17
12.3.1. Differential Signals Definition ......................................................................................................................... 17
12.3.2. Differential Swing Requirement for Clock (CK - CK) and Strobe (DQS - DQS) ............................................. 17
12.3.3. Single-ended Requirements for Differential Signals ...................................................................................... 18
12.3.4. Differential Input Cross Point Voltage ............................................................................................................ 19
12.4 Slew Rate Definition for Single Ended Input Signals ............................................................................................. 19
12.5 Slew rate definition for Differential Input Signals ................................................................................................... 19
13. AC & DC Output Measurement Levels ....................................................................................................................... 20
13.1 Single Ended AC and DC Output Levels............................................................................................................... 20
13.2 Differential AC and DC Output Levels ................................................................................................................... 20
13.3 Single-ended Output Slew Rate ............................................................................................................................ 20
13.4 Differential Output Slew Rate ................................................................................................................................ 21
14. DIMM IDD specification definition ............................................................................................................................... 22
15. IDD SPEC Table ......................................................................................................................................................... 24
16. Input/Output Capacitance ........................................................................................................................................... 26
17. Electrical Characteristics and AC timing ..................................................................................................................... 27
17.1 Refresh Parameters by Device Density................................................................................................................. 27
17.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin ................................................................ 27
17.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ................................................................. 27
17.3.1. Speed Bin Table Notes .................................................................................................................................. 31
18. Timing Parameters by Speed Grade .......................................................................................................................... 32
18.1 Jitter Notes ............................................................................................................................................................ 38
18.2 Timing Parameter Notes........................................................................................................................................ 39
19. Physical Dimensions................................................................................................................................................... 40
19.1 128Mbx8 based 128Mx64/x72 Module (1 Rank) - M378/91B2873GB0 ................................................................ 40
19.2 128Mbx8 based 256Mx64/x72 Module (2 Ranks) - M378/91B5673GB0 .............................................................. 41
-3-
Unbuffered DIMM
datasheet
Density
1GB
1GB
2GB
2GB
Organization
128Mx64
128Mx72
256Mx64
256Mx72
Component Composition
128Mx8(K4B1G0846G-BC##)*8
128Mx8(K4B1G0846G-BC##)*9
128Mx8(K4B1G0846G-BC##)*16
128Mx8(K4B1G0846G-BC##)*18
Rev. 1.2
DDR3 SDRAM
Number of
Rank
1
1
2
2
1. DDR3 Unbuffered DIMM Ordering Information
Part Number
2
M378B2873GB0-CF8/H9/K0/MA
M391B2873GB0-CF8/H9/K0/MA
M378B5673GB0-CF8/H9/K0/MA
M391B5673GB0-CF8/H9/K0/MA
Height
30mm
30mm
30mm
30mm
NOTE
:
1. "##" - F8/H9/K0/MA
2. F8 - 1066Mbps 7-7-7 / H9 - 1333Mbps 9-9-9 / K0 - 1600Mbps 11-11-11 / MA - 1866Mbps 13-13-13
- DDR3-1866(13-13-13) is backward compatible to DDR3-1600(11-11-11), DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1600(11-11-11) is backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)
2. Key Features
Speed
tCK(min)
CAS Latency
tRCD(min)
tRP(min)
tRAS(min)
tRC(min)
DDR3-800
6-6-6
2.5
6
15
15
37.5
52.5
DDR3-1066
7-7-7
1.875
7
13.125
13.125
37.5
50.625
DDR3-1333
9-9-9
1.5
9
13.5
13.5
36
49.5
DDR3-1600
11-11-11
1.25
11
13.75
13.75
35
48.75
DDR3-1866
13-13-13
1.07
13
13.91
13.91
34
47.91
Unit
ns
tCK
ns
ns
ns
ns
• JEDEC standard 1.5V ± 0.075V Power Supply
• V
DDQ
= 1.5V ± 0.075V
• 400MHz f
CK
for 800Mb/sec/pin, 533MHz f
CK
for 1066Mb/sec/pin, 667MHz f
CK
for 1333Mb/sec/pin, 800MHz f
CK
for 1600Mb/sec/pin,
933MHz f
CK
for 1866Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10,11,13
• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866)
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then T
CASE
85°C, 3.9us at 85°C < T
CASE
95°C
• Asynchronous Reset
3. Address Configuration
Organization
128x8(1Gb) based Module
Row Address
A0-A13
Column Address
A0-A9
Bank Address
BA0-BA2
Auto Precharge
A10/AP
-4-
Unbuffered DIMM
datasheet
Pin
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
Rev. 1.2
DDR3 SDRAM
Pin
82
83
84
85
86
87
88
89
4. x64 DIMM Pin Configurations (Front side/Back side)
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
Front
V
REFDQ
V
SS
DQ0
DQ1
V
SS
DQS0
DQS0
V
SS
DQ2
DQ3
V
SS
DQ8
DQ9
V
SS
DQS1
DQS1
V
SS
DQ10
DQ11
V
SS
DQ16
DQ17
V
SS
DQS2
DQS2
V
SS
DQ18
DQ19
V
SS
DQ24
DQ25
V
SS
DQS3
DQS3
V
SS
DQ26
DQ27
V
SS
NC
NC
V
SS
Back
V
SS
DQ4
DQ5
V
SS
DM0
NC
V
SS
DQ6
DQ7
V
SS
DQ12
DQ13
V
SS
DM1
NC
V
SS
DQ14
DQ15
V
SS
DQ20
DQ21
V
SS
DM2
NC
V
SS
DQ22
DQ23
V
SS
DQ28
DQ29
V
SS
DM3
NC
V
SS
DQ30
DQ31
V
SS
NC
NC
V
SS
NC
Pin
42
43
44
45
46
47
48
Front
NC
NC
V
SS
NC
NC
V
SS
NC
KEY
Pin
162
163
164
165
166
167
168
Back
NC
V
SS
NC
NC
V
SS
NC (TEST)
3
Reset
Front
DQ33
V
SS
DQS4
DQS4
V
SS
DQ34
DQ35
V
SS
DQ40
DQ41
V
SS
DQS5
DQS5
V
SS
DQ42
DQ43
V
SS
DQ48
DQ49
V
SS
DQS6
DQS6
V
SS
DQ50
DQ51
V
SS
DQ56
DQ57
V
SS
DQS7
DQS7
V
SS
DQ58
DQ59
V
SS
SA0
SCL
SA2
V
TT
Pin
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
Back
V
SS
DM4
NC
V
SS
DQ38
DQ39
V
SS
DQ44
DQ45
V
SS
DM5
NC
V
SS
DQ46
DQ47
V
SS
DQ52
DQ53
V
SS
DM6
NC
V
SS
DQ54
DQ55
V
SS
DQ60
DQ61
V
SS
DM7
NC
V
SS
DQ62
DQ63
V
SS
V
DDSPD
SA1
SDA
V
SS
V
TT
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
NC
CKE0
V
DD
BA2
NC
V
DD
A11
A7
V
DD
A5
A4
V
DD
A2
V
DD
CK1,NC
2
CK1,NC
2
V
DD
V
DD
V
REF
CA
NC
V
DD
A10/AP
BA0
V
DD
WE
CAS
V
DD
S1, NC
1
ODT1, NC
1
V
DD
NC
V
SS
DQ32
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
CKE1,NC
1
V
DD
NC
NC
V
DD
A12/BC
A9
V
DD
A8
A6
V
DD
A3
A1
V
DD
V
DD
CK0
CK0
V
DD
NC
A0
V
DD
BA1
V
DD
RAS
S0
V
DD
ODT0
A13
V
DD
NC
V
SS
DQ36
DQ37
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
NOTE
:
NC = No Connect; NU = Not Used; RFU = Reserved Future Use
1. S1, ODT1, CKE1: Used for dual-rank UDIMMs; NC on single-rank UDIMMs
2. CK1,NC and CK1,NC : Used for dual-rank UDIMMs; not used on single-rank UDIMMs, but terminated
3. TEST (pin 167) used by memory bus analysis tools (unused on memory DIMMs)
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
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